Method of Measuring a Structure, Inspection Apparatus, Lithographic System and Device Manufacturing Method

ABSTRACT

An overlay metrology target ( 600, 900, 1000 ) contains a plurality of overlay gratings ( 932 - 935 ) formed by lithography. First diffraction signals ( 740 ( 1 )) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals ( 740 ( 2 )) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/967,861, filed May 1, 2018, which claims priority of EuropeanApplication No. 17202806, which was filed on Nov. 21, 2017, and EuropeanApplication No. 17169918, which was filed on May 8, 2017, and areincorporated herein in their entirety by reference.

BACKGROUND Field of the Invention

The present invention relates to methods and apparatus for metrologyusable, for example, in the manufacture of devices by lithographictechniques, and to methods of manufacturing devices using lithographictechniques.

Background Art

A lithographic apparatus is a machine that applies a desired patternonto a substrate, usually onto a target portion of the substrate. Alithographic apparatus can be used, for example, in the manufacture ofintegrated circuits (ICs). In that instance, a patterning device, whichis alternatively referred to as a mask or a reticle, may be used togenerate a circuit pattern to be formed on an individual layer of theIC. This pattern can be transferred onto a target portion (e.g.including part of a die, one die, or several dies) on a substrate (e.g.,a silicon wafer). Transfer of the pattern is typically via imaging ontoa layer of radiation-sensitive material (resist) provided on thesubstrate. In general, a single substrate will contain a network ofadjacent target portions (known as fields) that are successivelypatterned.

In lithographic processes, it is desirable frequently to makemeasurements of the structures created, e.g. for process control andverification. Various tools for making such measurements are known,including scanning electron microscopes, which are often used to measurecritical dimension (CD), and specialized tools to measure overlay, theaccuracy of alignment of two layers in a device. Recently, various formsof scatterometers have been developed for use in the lithographic field.These devices direct a beam of radiation onto a target and measure oneor more properties of the scattered radiation—e.g. intensity at a singleangle of reflection as a function of wavelength; intensity at one ormore wavelengths as a function of reflected angle; or polarization as afunction of reflected angle—to obtain a diffraction “spectrum” fromwhich a property of interest of the target can be determined.

Examples of known scatterometers include angle-resolved scatterometersof the type described in US2006033921A1 and US2010201963A1. The targetsused by such scatterometers are relatively large gratings, e.g. 40 μm by40 μm, and the measurement beam generates a spot that is smaller thanthe grating (i.e., the grating is underfilled). In addition tomeasurement of feature shapes by reconstruction, diffraction basedoverlay can be measured using such apparatus, as described in publishedpatent application US2006066855A1. Diffraction-based overlay metrologyusing dark-field imaging of the diffraction orders enables measurementof overlay and other parameters on smaller targets. These targets can besmaller than the illumination spot and may be surrounded by productstructures on a substrate. The intensities from the environment productstructures can efficiently be separated from the intensities from theoverlay target with the dark-field detection in the image-plane.

Examples of dark field imaging metrology can be found in patentapplications US20100328655A1 and US2011069292A1 which documents arehereby incorporated by reference in their entirety. Further developmentsof the technique have been described in published patent publicationsUS20110027704A, US20110043791A, US2011102753A1, US20120044470A,US20120123581A, US20120242970A1, US20130258310A, US20130271740A andWO2013178422A1. Typically, in these methods, it is desired to measureasymmetry as a property of the target. Targets can be designed so thatmeasurement of asymmetry can be used to obtain measurement of variousperformance parameters such as overlay, focus or dose. Asymmetry of thetarget is measured by detecting differences in intensity betweenopposite portions of the diffraction spectrum using the scatterometer.For example, the intensities of +1 and −1 diffraction orders may becompared, to obtain a measure of asymmetry.

In order to reduce measurement time, known apparatuses for dark-fieldmetrology have apertures and detection systems configured to detectsimultaneously the radiation diffracted from component gratings in bothX and Y directions, and to detect these different directions ofdiffraction independently. Thus, the need for separate detection stepsin X and Y orientation is avoided. Examples of such techniques areincluded in the prior patent publications mentioned above, and also forexample in unpublished patent application EP16157503.0.

There is often a desire for grating structures in metrology targets ofthe type described to be segmented in a direction other than their maindirection of periodicity. Reasons for this segmentation may be to induceasymmetry-related effects to allow measurement of properties other thanoverlay by the same technique. Other reasons for this segmentation maybe to make the grating structures more “product-like”, so that they areprinted with patterning performance more like the product structuresthat are primarily of interest. Grating structures may simply becompletely two-dimensional in layout, for example to resemble an arrayof contact holes or pillars. Nevertheless, overlay or other parametersof the performance of the patterning process are normally controlled andmeasured separately in two or more directions, typically the X and Ydirections defined relative to the substrate.

A particular problem arises when target structures have segmentation orother two-dimensional character in both sets of features (in bothlayers). Unfortunately, where the grating structures in a metrologytarget are two-dimensionally structured, either being fullytwo-dimensional gratings or having some kind of segmentation in theorthogonal to their main direction of periodicity, diffraction by astructure in the orthogonal direction becomes mixed with diffraction inthe main direction, and the separate measurements become subject tonoise or cross-talk. Moreover, in such targets, overlay error in twodifferent directions will influence the diffraction signals captured bythe inspection apparatus. The known methods tend to assume that eachtarget structure has asymmetry only in a primary direction. When thisassumption is no longer valid, known techniques inevitably become lessaccurate. To exacerbate this problem, in general it may not even beknown to the operator of the metrology apparatus, whether metrologytargets under investigation have two-dimensional properties of the typedescribed.

SUMMARY OF THE INVENTION

The present invention in a first aspect aims to allow efficientmeasurement of a performance parameter such as overlay, even when targetstructures may be two-dimensional in nature. The present invention inanother aspect aims to allow recognition of two-dimensional character inmetrology targets, without relying on advance information.

The invention in a first aspect provides a method of determining overlayperformance of a lithographic process, the method including thefollowing steps:

(a) obtaining a plurality of target structures that have been formed bythe lithographic process, each target structure comprising a set offirst features arranged periodically in at least a first direction and aset of second features arranged periodically in at least the firstdirection and being subject to overlay error in the placement of thesecond features relative to the first features,

(b) using a detection system to capture first diffraction signalscomprising selected portions of radiation diffracted by at least asubset of the target structures;

(c) using the detection system to capture second diffraction signalscomprising selected portions of radiation diffracted by at least asubset of the overlay targets;

(d) processing asymmetry information derived from the first diffractionsignals and the second diffraction signals to calculate at least ameasurement of said overlay error in at least the first direction,

wherein said target structures have been formed with programmed offsetsin the placement of the second features relative to the first featuresin addition to said overlay error, the programmed offsets within eachsubset differing in both the first direction and in a second direction,the first and second directions being non-parallel,

and wherein the calculation of overlay error in step (d) combines saidasymmetry information with knowledge of said programmed offsets whilemaking no assumption whether asymmetry in a given target structureresults from relative displacement of the second features in the firstdirection, in the second direction or both directions.

With a suitable bias scheme the method allows overlay and otherasymmetry-related properties to be measured accurately, even in thepresence of (potentially unknown) two-dimensional structure and unknownoverlay in two directions. Additional sets of diffraction signals can beadded, if desired, to enhance accuracy further.

In a first embodiment, the first and second diffraction signals arecaptured under different capture conditions. Capture conditions maydiffer for example in one wavelength, polarization, and/or angulardistribution of radiation used for illumination and/or detection of thetarget structures.

In a second embodiment, first diffraction signals comprise radiationdiffracted by a first subset of target structures and the seconddiffraction signals comprise radiation diffracted by a second subset oftarget structures, different from the first subset of target structures.The target structures of said first subset and the target structures ofsaid second subset may for example differ in one or more of pitch,feature size, relative placement, and segmentation in the seconddirection.

In a third embodiment, the first and second subsets of target structuresof similar design are printed in one step, with more than four differentcombinations of programmed offsets. Seven or eight different programmedoffsets may be included in a composite metrology target.

The first, second and third embodiments can be combined, if desired.

The invention further provides an inspection apparatus for determiningoverlay performance of a lithographic process, the inspection apparatuscomprising:

a support for a substrate on which are provided a plurality of targetstructures that have been formed by the lithographic process, eachtarget structure comprising a set of first features arrangedperiodically in at least a first direction and a set of second featuresarranged periodically in at least the first direction and being subjectto overlay error in the placement of the second features relative to thefirst features,

an illumination system and a detection system which are togetheroperable to capture first diffraction signals comprising selectedportions of radiation diffracted by at least a subset of the targetstructures and second diffraction signals comprising selected portionsof radiation diffracted by at least a subset of the overlay targets;

a processor for processing asymmetry information derived from the firstdiffraction signals and the second diffraction signals to calculate atleast a measurement of said overlay error in at least the firstdirection,

wherein said processor is operable on the basis that said targetstructures have been formed with programmed offsets in the placement ofthe second features relative to the first features in addition to saidoverlay error, the programmed offsets within each subset differing inboth the first direction and in a second direction, the first and seconddirections being non-parallel,

and said processor is arranged to calculate overlay error by combiningsaid asymmetry information with knowledge of said programmed offsetswhile making no assumption whether asymmetry in a given target structureresults from relative displacement of the second features in the firstdirection, in the second direction or both directions.

The inspection apparatus can be implemented applying optical systems andtechniques known from the prior art, or using new apparatus. Theinspection apparatus can be implemented for example using theabove-mentioned dark-field imaging techniques, thereby obtaining thefirst and/or second diffraction signals for a plurality of targetstructures in a single image.

The invention in another aspect provides a metrology target for use in amethod according to the first aspect of the invention as set forthabove, wherein said metrology target includes at least four targetstructures, each target structure comprising first features periodic inboth a first direction and a second direction and second featuresperiodic in both the first direction and the second direction, the firstand second directions being non-parallel, and wherein said targetstructures have programmed offsets in placement of the second featuresrelative to the first features in both the first direction and thesecond direction, each target structure within said at least four targetstructures having a different combination of programmed offset in thefirst and second directions.

The invention in a further, independent aspect provides a metrologytarget for use in overlay metrology, said metrology target including aplurality of target structures, each target structure comprising firstfeatures periodic in both a first direction and a second direction andsecond features periodic in both the first direction and the seconddirection, the first and second directions being non-parallel, andwherein different ones of said target structures have differentprogrammed offsets in placement of the second features relative to thefirst features in both the first direction and the second direction, andwherein said target structures are arranged into said metrology targetsuch that any target structure bordering two neighboring targetstructures has a programmed offset intermediate between the programmedoffsets of those two neighboring target structures.

The invention in a further aspect provides a set of patterning devicesfor use in a lithographic process, the patterning devices including atleast a first patterning device configured to define the first featuresof a metrology target according to any aspect of the invention as setforth above, and a second patterning device configured for to define thesecond features of the metrology target.

The invention in another aspect provides a processing device arranged toreceive at least first and second diffraction signals captured from aplurality of target structures and to derive a measurement of overlayerror in at least a first direction by performing the step (d) in themethod according to the first aspect of the invention as set forthabove.

The invention further provides one or more computer program productscomprising machine readable instructions for causing a programmableprocessing device to implement one or more aspects of the invention asset forth above. The machine readable instructions may be embodied, forexample, in a non-transitory storage medium.

The machine readable instructions may be further arranged to cause theprogrammable processing device to control automatically the operation ofan inspection apparatus to cause capture of the first and seconddiffraction signals by steps (b) and (c) of the method.

The invention further provides a lithographic system including alithographic apparatus and an inspection apparatus according to thesecond aspect of the invention, as set forth above.

The invention further provides a method of manufacturing devices whereina device pattern is applied to a series of substrates using alithographic process, the method including measuring one or moreperformance parameters using a plurality of target structures formed aspart of or beside said device pattern on at least one of said substratesusing a method according to the invention as set forth above, andcontrolling the lithographic process for later substrates in accordancewith the result of the measuring.

Further features and advantages of the invention, as well as thestructure and operation of various embodiments of the invention, aredescribed in detail below with reference to the accompanying drawings.It is noted that the invention is not limited to the specificembodiments described herein. Such embodiments are presented herein forillustrative purposes only. Additional embodiments will be apparent topersons skilled in the relevant art(s) based on the teachings containedherein.

BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES

Embodiments of the invention will now be described, by way of example,with reference to the accompanying drawings in which:

FIG. 1 depicts a lithographic apparatus together with other apparatusesforming a production facility for semiconductor devices;

FIGS. 2(a)-2(b) illustrate schematically 2(a) an inspection apparatusadapted to perform angle-resolved scatterometry and dark-field imaginginspection methods in accordance with some embodiments of the inventionand 2(b) an enlarged detail of the diffraction of incident radiation bya target grating in the apparatus of FIG. 2(a);

FIGS. 3(a)-3(c) illustrate 3(a) a segmented illumination profile, 3(b)the production of diffraction signals in different directions under thesegmented illumination profile and 3(c) the layout of a prism device ina segmented detection system, all in the operation of one embodiment ofthe inspection apparatus of FIG. 2;

FIGS. 4(a)-4(b) illustrate a composite metrology target including anumber of component gratings 4(a) in a case where each component gratingis periodic in only one direction and 4(b) in a case where eachcomponent grating is or may be periodic in two directions;

FIG. 5 illustrates a multiple image of the target of FIG. 4, captured bythe apparatus of FIG. 4 with spatial separation of diffraction orders;

FIGS. 6(a)-6(c) illustrate an example target layout according to a firstembodiment of the present disclosure, in plan view and withcross-sections along lines B and C;

FIG. 7 illustrates dark-field images of the target of FIG. 6 obtainedusing first and second measurement conditions in a method according tothe first embodiment of the present disclosure;

FIG. 8 is a flowchart of a method of measuring a property of a targetstructure and a method of controlling a lithographic process using theprinciples of the present disclosure; and

FIGS. 9(a)-9(b) illustrates 9(a) a target layout similar to that ofFIGS. 6 and 9(b) implementation of part of the method of FIG. 8 usingsuch a target in accordance with the first embodiment of the presentdisclosure;

FIGS. 10(a)-10(b) illustrate 10(a) a target layout according to a secondembodiment of the present disclosure and 10(b) implementation of part ofthe method of FIG. 8 using such a target in accordance with the secondembodiment of the present disclosure;

FIG. 11 illustrates a dark-field image of the target of FIG. 6 obtainedusing first and second target types in a method according to the secondembodiment of the present disclosure;

FIGS. 12(a)-12(c) illustrate 12(a) a metrology target according to amodified first embodiment of the present disclosure, 12(b) one set offeatures defined in the target layout and 12(c) detail of a centralportion of the target layout circled in 12(a);

FIG. 13 illustrates a variant of the target of FIG. 12, includingtransition zones;

FIGS. 14(a)-14(b) illustrate 14(a) a metrology target according to athird embodiment of the present disclosure, and 14(b) part of a multipleimage of the target, captured by the apparatus of FIG. 4 with spatialseparation of diffraction orders, with a schematic representation ofsignal processing to obtain asymmetry signals from a plurality of targetstructures;

FIG. 15 illustrates implementation of part of the method of FIG. 8 usingsuch a target in accordance with the third embodiment of the presentdisclosure;

FIGS. 16(a)-16(b) illustrate 16(a) an enlarged metrology targetaccording to a modified third embodiment of the present disclosure, and16(b) part of a multiple image of the target, captured by the apparatusof FIG. 4 with spatial separation of diffraction orders, with aschematic representation of signal processing to obtain asymmetrysignals from a plurality of target structures; and

FIGS. 17(a)-17(b) illustrate alternative groupings 17(a) and 17(b) oftarget structures in the embodiment of FIG. 16.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Before describing embodiments of the invention in detail, it isinstructive to present an example environment in which embodiments ofthe present invention may be implemented.

FIG. 1 at 100 shows a lithographic apparatus LA as part of an industrialfacility implementing a high-volume, lithographic manufacturing process.In the present example, the manufacturing process is adapted for themanufacture of semiconductor products (integrated circuits) onsubstrates such as semiconductor wafers. The skilled person willappreciate that a wide variety of products can be manufactured byprocessing different types of substrates in variants of this process.The production of semiconductor products is used purely as an examplewhich has great commercial significance today.

Within the lithographic apparatus (or “litho tool” 100 for short), ameasurement station MEA is shown at 102 and an exposure station EXP isshown at 104. A control unit LACU is shown at 106. In this example, eachsubstrate visits the measurement station and the exposure station tohave a pattern applied. In an optical lithographic apparatus, forexample, a projection system is used to transfer a product pattern froma patterning device MA onto the substrate using conditioned radiationand a projection system. This is done by forming an image of the patternin a layer of radiation-sensitive resist material.

The term “projection system” used herein should be broadly interpretedas encompassing any type of projection system, including refractive,reflective, catadioptric, magnetic, electromagnetic and electrostaticoptical systems, or any combination thereof, as appropriate for theexposure radiation being used, or for other factors such as the use ofan immersion liquid or the use of a vacuum. The patterning MA device maybe a mask or reticle, which imparts a pattern to a radiation beamtransmitted or reflected by the patterning device. Well-known modes ofoperation include a stepping mode and a scanning mode. As is well known,the projection system may cooperate with support and positioning systemsfor the substrate and the patterning device in a variety of ways toapply a desired pattern to many target portions across a substrate.Programmable patterning devices may be used instead of reticles having afixed pattern. The radiation for example may include electromagneticradiation in the deep ultraviolet (DUV) or extreme ultraviolet (EUV)wavebands. The present disclosure is also applicable to other types oflithographic process, for example imprint lithography and direct writinglithography, for example by electron beam.

The lithographic apparatus control unit LACU controls the movements andmeasurements of various actuators and sensors, causing the apparatus LAto receive substrates W and reticles MA and to implement the patterningoperations. LACU also includes signal processing and data processingcapacity to implement desired calculations relevant to the operation ofthe apparatus. In practice, control unit LACU will be realized as asystem of many sub-units, each handling the real-time data acquisition,processing and control of a subsystem or component within the apparatus.

Before the pattern is applied to a substrate at the exposure stationEXP, the substrate is processed in at the measurement station MEA sothat various preparatory steps may be carried out. The preparatory stepsmay include mapping the surface height of the substrate using a levelsensor and measuring the position of alignment marks on the substrateusing an alignment sensor. The alignment marks are arranged nominally ina regular grid pattern. However, due to inaccuracies in creating themarks and also due to deformations of the substrate that occurthroughout its processing, the marks deviate from the ideal grid.Consequently, in addition to measuring position and orientation of thesubstrate, the alignment sensor in practice must measure in detail thepositions of many marks across the substrate area, if the apparatus isto print product features at the correct locations with very highaccuracy. The apparatus may be of a so-called dual stage type which hastwo substrate tables, each with a positioning system controlled by thecontrol unit LACU. While one substrate on one substrate table is beingexposed at the exposure station EXP, another substrate can be loadedonto the other substrate table at the measurement station MEA so thatvarious preparatory steps may be carried out. The measurement ofalignment marks is therefore very time-consuming and the provision oftwo substrate tables enables a substantial increase in the throughput ofthe apparatus. If the position sensor IF is not capable of measuring theposition of the substrate table while it is at the measurement stationas well as at the exposure station, a second position sensor may beprovided to enable the positions of the substrate table to be tracked atboth stations. Lithographic apparatus LA for example is of a so-calleddual stage type which has two substrate tables WTa and WTb and twostations—an exposure station and a measurement station—between which thesubstrate tables can be exchanged.

Within the production facility, apparatus 100 forms part of a “lithocell” or “litho cluster” that contains also a coating apparatus 108 forapplying photosensitive resist and other coatings to substrates W forpatterning by the apparatus 100. At an output side of apparatus 100, abaking apparatus 110 and developing apparatus 112 are provided fordeveloping the exposed pattern into a physical resist pattern. Betweenall of these apparatuses, substrate handling systems take care ofsupporting the substrates and transferring them from one piece ofapparatus to the next. These apparatuses, which are often collectivelyreferred to as the “track”, are under the control of a track controlunit which is itself controlled by a supervisory control system SCS,which also controls the lithographic apparatus via lithographicapparatus control unit LACU. Thus, the different apparatuses can beoperated to maximize throughput and processing efficiency. Supervisorycontrol system SCS receives recipe information R which provides in greatdetail a definition of the steps to be performed to create eachpatterned substrate.

Once the pattern has been applied and developed in the litho cell,patterned substrates 120 are transferred to other processing apparatusessuch as are illustrated at 122, 124, 126. A wide range of processingsteps is implemented by various apparatuses in a typical manufacturingfacility. For the sake of example, apparatus 122 in this embodiment isan etching station, and apparatus 124 performs a post-etch annealingstep. Further physical and/or chemical processing steps are applied infurther apparatuses, 126, etc. Numerous types of operation can berequired to make a real device, such as deposition of material,modification of surface material characteristics (oxidation, doping, ionimplantation etc.), chemical-mechanical polishing (CMP), and so forth.The apparatus 126 may, in practice, represent a series of differentprocessing steps performed in one or more apparatuses.

As is well known, the manufacture of semiconductor devices involves manyrepetitions of such processing, to build up device structures withappropriate materials and patterns, layer-by-layer on the substrate.Accordingly, substrates 130 arriving at the litho cluster may be newlyprepared substrates, or they may be substrates that have been processedpreviously in this cluster or in another apparatus entirely. Similarly,depending on the required processing, substrates 132 on leavingapparatus 126 may be returned for a subsequent patterning operation inthe same litho cluster, they may be destined for patterning operationsin a different cluster, or they may be finished products to be sent fordicing and packaging.

Each layer of the product structure requires a different set of processsteps, and the apparatuses 126 used at each layer may be completelydifferent in type. Further, even where the processing steps to beapplied by the apparatus 126 are nominally the same, in a largefacility, there may be several supposedly identical machines working inparallel to perform the step 126 on different substrates. Smalldifferences in set-up, or faults between these machines can mean thatthey influence different substrates in different ways. Even steps thatare relatively common to each layer, such as etching (apparatus 122) maybe implemented by several etching apparatuses that are nominallyidentical but working in parallel to maximize throughput. In practice,moreover, different layers require different etch processes, for examplechemical etches, plasma etches, according to the details of the materialto be etched, and special requirements such as, for example, anisotropicetching.

The previous and/or subsequent processes may be performed in otherlithography apparatuses, as just mentioned, and may even be performed indifferent types of lithography apparatus. For example, some layers inthe device manufacturing process which are very demanding in parameterssuch as resolution and overlay may be performed in a more advancedlithography tool than other layers that are less demanding. Thereforesome layers may be exposed in an immersion type lithography tool, whileothers are exposed in a ‘dry’ tool. Some layers may be exposed in a toolworking at DUV wavelengths, while others are exposed using EUVwavelength radiation.

In order that the substrates that are exposed by the lithographicapparatus are exposed correctly and consistently, it is desirable toinspect exposed substrates to measure properties such as overlay errorsbetween subsequent layers, line thicknesses, critical dimensions (CD),etc. Accordingly a manufacturing facility in which litho cell LC islocated also includes metrology system MET which receives some or all ofthe substrates W that have been processed in the litho cell. Metrologyresults are provided directly or indirectly to the supervisory controlsystem (SCS) 138. If errors are detected, adjustments may be made toexposures of subsequent substrates, especially if the metrology can bedone soon and fast enough that other substrates of the same batch arestill to be exposed. Also, already exposed substrates may be strippedand reworked to improve yield, or discarded, thereby avoiding performingfurther processing on substrates that are known to be faulty. In a casewhere only some target portions of a substrate are faulty, furtherexposures can be performed only on those target portions which are good.

Also shown in FIG. 1 is a metrology apparatus 140 which is provided formaking measurements of parameters of the products at desired stages inthe manufacturing process. A common example of a metrology apparatus ina modern lithographic production facility is a scatterometer, forexample an angle-resolved scatterometer or a spectroscopicscatterometer, and it may be applied to measure properties of thedeveloped substrates at 120 prior to etching in the apparatus 122. Usingmetrology apparatus 140, it may be determined, for example, thatimportant performance parameters such as overlay or critical dimension(CD) do not meet specified accuracy requirements in the developedresist. Prior to the etching step, the opportunity exists to strip thedeveloped resist and reprocess the substrates 120 through the lithocluster. As is also well known, the metrology results 142 from theapparatus 140 can be used to maintain accurate performance of thepatterning operations in the litho cluster, by supervisory controlsystem SCS and/or control unit LACU 106 making small adjustments overtime, thereby minimizing the risk of products being madeout-of-specification, and requiring re-work. Of course, metrologyapparatus 140 and/or other metrology apparatuses (not shown) can beapplied to measure properties of the processed substrates 132, 134, andincoming substrates 130.

Example Inspection Apparatus

FIG. 2(a) shows schematically the key elements of an inspectionapparatus implementing so-called dark field imaging metrology. Theapparatus may be a stand-alone device or incorporated in either thelithographic apparatus LA, e.g., at the measurement station, or thelithographic cell LC. An optical axis, which has several branchesthroughout the apparatus, is represented by a dotted line 0. A targetgrating structure T and diffracted rays are illustrated in more detailin FIG. 2(b).

As described in the prior applications cited in the introduction, thedark-field-imaging apparatus of FIG. 2(a) may be part of a multi-purposeangle-resolved scatterometer that may be used instead of, or in additionto, a spectroscopic scatterometer. In this type of inspection apparatus,radiation emitted by a radiation source 11 is conditioned by anillumination system 12. For example, illumination system 12 may includea collimating lens system 12 a, a color filter 12 b, a polarizer 12 cand an aperture device 13. The conditioned radiation follows anillumination path IP, in which it is reflected by partially reflectingsurface 15 and focused into a spot S on substrate W via an objectivelens 16. A metrology target T may be formed on substrate W. Theobjective lens 16 may be similar in form to a microscope objective lens,but has a high numerical aperture (NA), preferably at least 0.9 and morepreferably at least 0.95. Immersion fluid can be used to obtainnumerical apertures over 1 if desired.

The objective lens 16 in this example serves also to collect radiationthat has been scattered by the target. Schematically, a collection pathCP is shown for this returning radiation. The multi-purposescatterometer may have two or more measurement branches in thecollection path. The illustrated example has a pupil imaging branchcomprising pupil imaging optical system 18 and pupil image sensor 19. Animaging branch is also shown, which will be described in more detailbelow. Additionally, further optical systems and branches will beincluded in a practical apparatus, for example to collect referenceradiation for intensity normalization, for coarse imaging of capturetargets, for focusing and so forth. Details of these can be found in theprior publications mentioned above.

Where a metrology target T is provided on substrate W, this may be a 1-Dgrating, which is printed such that, after development, the bars areformed of solid resist lines. The target may be a 2-D grating, which isprinted such that after development, the grating is formed of solidresist pillars or vias in the resist. The bars, pillars or vias mayalternatively be etched into the substrate. Each of these gratings is anexample of a target structure whose properties may be investigated usingthe inspection apparatus. In the case of gratings, the structure isperiodic. In the case of an overlay metrology target, the grating isprinted on top of or interleaved with another grating that has beenformed by a previous patterning step.

The various components of illumination system 12 can be adjustable toimplement different metrology ‘recipes’ within the same apparatus. Inaddition to selecting wavelength (color) and polarization ascharacteristics of the illuminating radiation, illumination system 12can be adjusted to implement different illumination profiles. The planeof aperture device 13 is conjugate with a pupil plane of objective lens16 and with the plane of the pupil image detector 19. Therefore, anillumination profile defined by aperture device 13 defines the angulardistribution of light incident on substrate W in spot S. To implementdifferent illumination profiles, an aperture device 13 can be providedin the illumination path. The aperture device may comprise differentapertures 13 a, 13 b, 13 c etc. mounted on a movable slide or wheel. Itmay alternatively comprise a fixed or programmable spatial lightmodulator (SLM). As a further alternative, optical fibers may bedisposed at different locations in the illumination pupil plane and usedselectively to deliver light or not deliver light at their respectivelocations. These variants are all discussed and exemplified in thedocuments cited above. The aperture device may be of a reflective form,rather than transmissive. For example, a reflective SLM might be used.Indeed, in an inspection apparatus working in the UV or EUV wavebandmost or all of the optical elements may be reflective.

Depending on the illumination mode, example rays 30 a may be provided sothat the angle of incidence is as shown at ‘I’ in FIG. 2(b). The path ofthe zero order ray reflected by target T is labeled ‘0’ (not to beconfused with optical axis ‘O’). Similarly, in the same illuminationmode or in a second illumination mode, rays 30 b can be provided, inwhich case the angles of incidence and reflection will be swappedcompared with the first mode. In FIG. 2(a), the zero order rays of thefirst and second example illumination modes are labeled 0 a and 0 brespectively.

As shown in more detail in FIG. 2(b), target grating T as an example ofa target structure is placed with substrate W normal to the optical axisO of objective lens 16. In the case of an off-axis illumination profile,a ray 30 a of illumination I, impinging on grating T from an angle offthe axis O, gives rise to a zeroth order ray (solid line 0) and twofirst order rays (dot-chain line +1 and double dot-chain line −1). Itshould be remembered that with an overfilled small target grating, theserays are just one of many parallel rays covering the area of thesubstrate including metrology target grating T and other features. Sincethe beam of illuminating rays 30 a has a finite width (necessary toadmit a useful quantity of light), the incident rays I will in factoccupy a range of angles, and the diffracted rays 0 and +1/−1 will bespread out somewhat. According to the point spread function of a smalltarget, the diffracted radiation of each order +1 and −1 will be furtherspread over a range of angles, not a single ideal ray as shown.

If the target has multiple periodic components, then each of those willgive rise to first and higher diffracted rays, which may be indirections into or out of the page. The example of FIG. 2(b) is merelydescribing a one-dimensional grating for simplicity.

In the branch of the collection path for dark-field imaging, imagingoptical system 20 forms an image T′ of the target on the substrate W onsensor 23 (e.g. a CCD or CMOS sensor). An aperture stop 21 is providedin a plane in the imaging branch of the collection path CP which isconjugate to a pupil plane of objective lens 16. Aperture stop 21 mayalso be called a pupil stop. Aperture stop 21 can take different forms,just as the illumination aperture can take different forms. The aperturestop 21, in combination with the effective aperture of lens 16,determines what portion of the scattered radiation is used to producethe image on sensor 23. Typically, aperture stop 21 functions to blockthe zeroth order diffracted beam so that the image of the target formedon sensor 23 is formed only from the first order beam(s). In an examplewhere both first order beams were combined to form an image, this wouldbe the so-called dark field image, equivalent to dark-field microscopy.

The images captured by sensor 23 are output to image processor andcontroller PU, the function of which will depend on the particular typeof measurements being performed. For the present purpose, measurementsof asymmetry of the target structure are performed. Asymmetrymeasurements can be combined with knowledge of the target structures toobtain measurements of performance parameters of lithographic processused to form them. Performance parameters that can be measured in thisway include for example overlay, focus and dose. Special designs oftargets are provided to allow these measurements of differentperformance parameters to be made through the same basic asymmetrymeasurement method.

Processor and controller PU also generates control signals such as λ andAP, for controlling the illumination characteristics (polarization,wavelength) and for selecting the aperture using aperture device 13 or aprogrammable spatial light modulator. Aperture stop 21 may also becontrolled in the same way. Each combination of these parameters of theillumination and the detection is considered a “recipe” for themeasurements to be made.

Referring again to FIG. 2(b) and the illuminating rays 30 a, +1 orderdiffracted rays from the target grating will enter the objective lens 16and contribute to the image recorded at sensor 23. Rays 30 b areincident at an angle opposite to rays 30 a, and so the −1 orderdiffracted rays enter the objective and contribute to the image.Aperture stop 21 blocks the zeroth order radiation when using off-axisillumination. As described in the prior publications, illumination modescan be defined with off-axis illumination in X and Y directions.

Apertures 13 c, 13 e and 13 f in the aperture device 13 of FIG. 2(a)include off-axis illumination in both X and Y directions, and are ofparticular interest for the present disclosure. Aperture 13 c createswhat may be referred to as a segmented illumination profile, and may forexample be used in combination with a segmented aperture defined forexample by a segmented prism 22, described below. Apertures 13 e and 13f may for example be used in combination with an on-axis aperture stop21, in a manner described in some the prior published patentapplications, mentioned above.

By comparing images of the target grating under these differentillumination modes, asymmetry measurements can be obtained.Alternatively, asymmetry measurements could be obtained by keeping thesame illumination mode, but rotating the target. While off-axisillumination is shown, on-axis illumination of the targets may insteadbe used and a modified, off-axis aperture stop 21 could be used to passsubstantially only one first order of diffracted light to the sensor. Ina further example, a segmented prism 22 is used in combination with anon-axis illumination mode. The segmented prism 22 can be regarded as acombination of individual off-axis prisms, and can be implemented as aset of prisms mounted together, if desired. These prisms define asegmented aperture in which rays in each quadrant are deflected slightlythrough an angle. This deflection in the pupil plane in has the effectof spatially separating the +1 and −1 orders in each direction in theimage plane. In other words, the radiation of each diffraction order anddirection forms an image to different locations on sensor 23 so thatthey can be detected and compared without the need for two sequentialimage capture steps. Effectively, separate images are formed atseparated locations on the image sensor 23. In FIG. 2(a) for example, animage T′(+1a), made using +1 order diffraction from illuminating ray 30a, is spatially separated from an image T′(−1b) made using −1 orderdiffraction from illuminating ray 30 b. This technique is disclosed inthe above-mentioned published patent application US20110102753A1, thecontents of which are hereby incorporated by reference in its entirety.2nd, 3rd and higher order beams (not shown in FIG. 2) can be used inmeasurements, instead of, or in addition to, the first order beams. As afurther variation, the off-axis illumination mode can be kept constant,while the target itself is rotated 180 degrees beneath objective lens 16to capture images using the opposite diffraction orders.

Whichever of these techniques is used, the present disclosure applies tomethods in which radiation diffracted in two directions, for example theorthogonal directions called X and Y, is simultaneously captured.

While a conventional lens-based imaging system is illustrated, thetechniques disclosed herein can be applied equally with plenopticcameras, and also with so-called “lensless” or “digital” imagingsystems. There is therefore a large degree of design choice, which partsof the processing system for the diffracted radiation are implemented inthe optical domain and which are implemented in the electronic andsoftware domains.

Image-Based Asymmetry Measurement

Referring to FIG. 3 (a), and viewing the pupil plane of the illuminationsystem P(IP) in the vicinity of aperture device 13, aperture 13 c hasbeen selected to define a specific spatial profile of illumination,illustrated at 902. In this desired spatial profile of the illuminationsystem, two diametrically opposite quadrants, labeled a and b, arebright, while the other two quadrants are dark (opaque). This spatialillumination profile, when focused to form spot S on the target T,defines a corresponding angular distribution of illumination, in whichrays from angles only in these two quadrants. This segmented type ofaperture is known in scatterometry apparatus, from the published patentapplication US 2010/201963. The merits of this modified illuminationaperture will be described further below.

When rays from the bright segments of the illumination profile 902 arediffracted by periodic features in a target structure, they will be atangles corresponding to a shift in the pupil plane. Arrows ‘x’ in FIG. 3(a) indicate the direction of diffraction of illumination caused bystructures periodic in the X direction, while arrows ‘y’ indicate thedirection of diffraction of illumination caused by structures periodicin the Y direction. Arrows ‘0’ indicate direct reflection, in otherwords zero order diffraction. A feature of this segmented type ofaperture is that, with regard to lines of symmetry defined by expecteddirections of diffraction (X and Y in this example), illuminated regionsof the illumination profile are symmetrically opposite dark regions.Therefore there is the possibility to segregate the higher orderdiffracted radiation, while collecting radiation directed in bothdirections simultaneously.

FIG. 3 (b) illustrates a distribution of illumination in a conjugatepupil plane P(CP) in the collection path of the inspection apparatus.Assume firstly that the target T is a one-dimensional diffractiongrating, with a periodicity in the X direction as a first direction.While the spatial profile 902 of the illumination has bright quadrantslabeled a and b, the diffraction pattern resulting from diffraction bythe lines of the target grating is represented by the pattern at 904 inFIG. 3 (b). In this pattern, in addition to zero order reflectionslabeled a₀ and b₀ there are first order diffraction signals visible,labeled a_(+x), b_(−x). Because other quadrants of the illuminationaperture are dark, and more generally because the illumination patternhas 180° rotational symmetry, the diffraction orders a_(+x) and b_(−x)are “free”, meaning that they do not overlap with the zero order orhigher order signals from other parts of the illumination aperture(considering only the X direction at this stage). This property of thesegmented illumination pattern can be exploited to obtain clear firstorder signals from a diffraction grating (alignment mark) having a pitchwhich is half the minimum pitch that could be imaged if a conventional,circularly-symmetric illumination aperture were used.

Now, assume that the target has periodic features in a second direction,for example the Y direction which is orthogonal to the first direction.These features in the second direction may arise from segmentation inthe nominally one-dimensional grating. They may also arise from otherone-dimensional gratings with Y orientation, that may be present withinthe area of spot S and the within the field of view of the inspectionapparatus. They may also arise from a mixture of these. Assume furtherthat the features periodic in the Y direction have the same period, andtherefore the same diffraction angle, as the features periodic in the Xdirection. The result is diffraction signals a_(+y) and b_(−y) that canbe seen in the pupil 904 of the collection path. These signals comprisefirst order diffraction signals in the Y direction. For simplicity ofillustration in the present drawings, the diffraction signals in the Ydirection and the X direction are shown as free of one another. Inpractice, the X diffraction signals and the Y diffraction may overlap inthe pupil 904. The reader skilled in the art will understand that thisdepends on the pitches of the target in X and Y and the chosenwavelength.

Zero order signals a₀ and b₀ are also present in the pupil of thecollection system, as illustrated. Depending whether these zero ordersignals are wanted or not, they may be blocked by a segmented aperturestop 21, similar in form to aperture 13 d. For asymmetry-basedmeasurements, it is generally the higher order signals, for example the+1 and −1 order signals that are of interest.

In the simple example illustrated, the Y direction diffraction signalsdo not overlap the X direction diffraction signals in the pupil of thecollection path, but in other situations they might overlap, dependingon the pitch of the grating and the wavelength of illumination. In anycase, where two-dimensional features of some kind are present,diffraction signals from two directions can become mixed in the samequadrants of the pupil in the collection path. In the case of segmentedgratings, the segmentation in one or both directions may be much finerthan the pitch of the grating in the other direction. Where very finesegmentation is present, the higher order diffraction signals may fallcompletely outside the aperture of the collection path, but the presentinventors have recognized that the diffraction in the second directionmay nevertheless cause a change in the signals from the first direction,which do fall into the quadrants at top left and bottom right in FIG.3(b).

FIG. 3 (c) shows schematically the layout of the segmented prism 22 inthe imaging branch of the inspection apparatus of FIG. 2. The circularpupil P(CP) is represented by a dotted circle. In each quadrant of thepupil, a differently angled prism is provided, which deflects theradiation through a certain angle. This angular deflection in the pupilplane translates into a spatial separation of images in the plane of thedetector 23, as illustrated already above with reference to FIG. 2(a).The operation of the apparatus in this type of configuration, and somepractical benefits and challenges, will now be described in further. Theprinciples of the present disclosure are applicable in otherconfigurations, however.

FIG. 4 depicts a composite metrology target formed on a substrate Waccording to known practice. The composite target comprises four targetstructures in the form of gratings 32 to 35 positioned closely togetherso that they will all be within the measurement spot S formed by theillumination beam of the metrology apparatus. A circle 31 indicates theextent of spot S on the substrate W. The four target structures thus areall simultaneously illuminated and simultaneously imaged on sensor 23.In an example dedicated to overlay measurement, gratings 32 to 35 arethemselves overlay gratings formed by first features and second featuresthat are patterned in different lithographic steps. For ease ofdescription it will be assumed that the first features and secondfeatures are formed in different layers of the semiconductor deviceformed on substrate W, but they may alternatively be formed in onelayer, for example as part of a multiple patterning process. Gratings 32to 35 may be differently biased, meaning that they have designed-inoverlay offsets additional to any unknown overlay error introduced bythe patterning process. Knowledge of the biases facilitates measurementof overlay between the layers in which the different parts of theoverlay gratings are formed. Gratings 32 to 35 may also differ in theirorientation, as shown, so as to diffract incoming radiation in X and Ydirections.

In one known example, gratings 32 and 34 are X-direction gratings withbiases of +d, −d, respectively in the placement of one grating relativeto another. This means that grating 32 has its overlying componentsarranged so that if they were both printed exactly at their nominallocations one of the components would be offset relative to the other bya distance d. Grating 34 has its components arranged so that ifperfectly printed there would be an offset of d but in the oppositedirection to the first grating and so on. Gratings 33 and 35 areY-direction gratings with offsets +d and −d respectively. Separateimages of these gratings can be identified in the image captured bysensor 23. While four gratings are illustrated, another embodiment mightrequire a larger matrix to obtain the desired accuracy.

FIG. 5 shows an example of an image that may be formed on and detectedby the sensor 23, using the target of FIG. 4 in the apparatus of FIGS.2-3, using the segmented illumination profile and using the segmentedprisms 22. Such a configuration provides off-axis illumination in both Xand Y orientations simultaneously, and permits detection of diffractionorders in X and Y simultaneously, from the quadrants at upper left andlower right of the pupil 904 in FIG. 3(b).

The dark rectangle 40 represents the field of the image on the sensor,within which the illuminated spot 31 on the substrate is imaged intofour corresponding circular areas, each using radiation only from onequadrant of the pupil 904 in the collection path CP. Four images of thetarget are labelled 502 to 508. Within image 502 the image of theilluminated spot 31 using radiation of the upper left quadrant of thepupil 904 is labelled 41. Within this, rectangular areas 42-45 representthe images of the small target gratings 32 to 35. If the gratings arelocated in product areas, product features may also be visible in theperiphery of this image field. Image processor and controller PUprocesses these images using pattern recognition to identify theseparate images 42 to 45 of gratings 32 to 35. In this way, the imagesdo not have to be aligned very precisely at a specific location withinthe sensor frame, which greatly improves throughput of the measuringapparatus as a whole.

As mentioned and as illustrated in FIG. 5, because of the action of thesegmented prism 22 on the signals in the pupil 904 of the collectionpath, and because of the segmented illumination profile 902 and itsorientation relative to the X and Y directions of the target T, each ofthe four images 502-508 uses only certain portions of the diffractionspectra of each target. Thus the images 504 and 508 at lower left andupper right respectively are formed of the zero order radiation a₀ andb₀ respectively. The image 502 is formed of higher order diffractedradiation, specifically radiation diffracted in the negative X directionfrom bright quadrant b and the positive Y direction from bright quadranta (diffraction signals a_(+y) and b_(−y)). Conversely, image 506 isformed of higher order diffracted radiation, specifically radiationdiffracted in the positive X direction from bright quadrant b and thenegative Y direction from bright quadrant a (diffraction signals a_(−y)and b_(+x)).

From the target comprising only one-dimensional gratings, there is nocross-talk between signals diffracted in the X direction and signalsdiffracted in the Y direction. That is because each component grating31-35 diffracts radiation in only one of the two directions, and theimage of each grating is spatially separated within the images 502-508by the imaging action of the optical system. Once the separate images ofthe gratings have been identified, the intensities of those individualimages can be measured, e.g., by averaging or summing selected pixelintensity values within the identified areas (ROIs). Intensities and/orother properties of the images can be compared with one another toobtain measurements of asymmetry for the four or more gratingssimultaneously. These results can be combined with knowledge of thetarget structures and bias schemes, to measure different parameters ofthe lithographic process. Overlay performance is an important example ofsuch a parameter, and is a measure of the lateral alignment of twolithographic layers. Overlay can be defined more specifically, forexample, as the lateral position difference between the center of thetop of a bottom grating and the center of the bottom of a correspondingtop-grating. To obtain measurements of other parameters of thelithographic process, different target designs can be used. Again,knowledge of the target designs and bias schemes can be combined withasymmetry measurements to obtain measurements of the desired performanceparameter. Target designs are known, for example, for obtainingmeasurements of dose or focus from asymmetry measurements obtained inthis way.

Problems with Two-Dimensional Targets

Referring now to FIG. 4 (b), as mentioned above, some targets willscatter or diffract radiation in two directions within the same part ofthe image. The target of FIG. 4 (b) has two-dimensional structures ineach of the four component gratings 432-435. The two dimensionalstructures may arise from segmentation in a one-dimensional grating inone or more layers. The two-dimensional structures may alternativelyarise from gratings representing arrays of contact holes or vias, forexample, which are fully 2-dimensional.

Although diffraction will therefore occur in both directions X and Y,within each grating image 42-45, nevertheless the purpose of themetrology target is to measure a parameter such as overlay separately inone or both of the X and Y directions. The contribution of diffractionfrom the other direction, in the same part of the image, represents“contamination” or noise in the wanted diffraction signals. In theoverlay measurement we derive X-overlay from the asymmetry (differencebetween +1st and −1st order diffraction) in the X direction. Even at asimplistic level, it can be appreciated that the added radiation fromdiffraction in the Y direction leads to a worse signal to noise ratio.If the segmentation is present in both layers (or has an asymmetricshape), the added diffraction will not just add light, but also addasymmetry. Moreover since overlay error may arise in both directions,variations in asymmetry signals assumed to relate to one direction maybe sensitivity to overlay errors in the other direction. This problemarises regardless whether the diffraction signals in the seconddirection fall within the detection pupil 904. This will lead tomeasurement errors, on top of the signal to noise degradation.

Overlay Targets for Two-Dimensional Overlay Measurement

FIG. 6 shows enlarged schematic views (a), (b) and (c) of a metrologytarget 600 formed on a substrate and adapted for overlay measurement inaccordance with a first embodiment of the present disclosure. Themetrology target in this example comprises four target structures 632,633, 634, 635 which may have a size and layout similar to the gratings32-35 in the target of FIG. 4(a). The view (a) is a plan view from abovethe substrate. The view (b) is a cross-section along the line B in view(a) and the view (c) is a cross-section along the line C. As can beseen, each target structure 632-635 includes a set of first features 662arranged periodically in at least a first direction. The first directionis the Y direction in this example, and each first feature 662 comprisesa bar which is segmented in the second (X) direction. A period Px ofsegmentation and a duty cycle of segmentation in the second directionare different to a period Py and duty cycle in the first direction,though they could be the same in another example.

Each target structure 632-635 further includes a set of second features664 arranged periodically in at least the first direction. The secondfeatures 664 in this example are also bars segmented in the seconddirection, with the same period Py in the first direction and the sameperiod Px of segmentation in the second direction. As shown in thecross-sectional views (b) and (c) the first features in this example areformed in a first layer L1 of the target structure and the secondfeatures are formed in a second layer L2. In other examples, formed forexample by multiple patterning processes, the first features and secondfeatures might be formed in a single layer.

Overlay performance relates to the ability of a lithographicmanufacturing process to place second features precisely, relative tothe positions of existing first features. Suppose that the target designis such that nominally each second feature is placed exactly on top of acorresponding first feature. In the presence of overlay error, thesecond features become displaced by an amount OVx in the X direction andOVy in the Y direction, relative to their corresponding first features.It is assumed that the overlay error in both directions is constant overthe small area of metrology target 600, though it may vary betweenmetrology targets across a substrate and between substrates. The overlayerror may result from inaccurate placement of the second featuresthemselves, or it may result from distortion of the first features,caused for example in the patterning step by which the first featureswere formed, or in subsequent chemical and/or physical processing steps.

As is known, target structures for overlay metrology can be formed withprogrammed offsets (also known as “bias”), in addition to the (unknown)overlay error. These bias values are programmed into the targetstructures by appropriate design of the patterning devices MA that areused to define the first features and second features in the differentlayers L1 and L2 of the substrate. In the known target of FIG. 4(a) eachtarget structure has bias in only one direction for measurement ofoverlay in that direction. It is assumed that overlay error in the otherdirection does not influence the measurement, but that turns out not tobe the case. The inventors have recognized that, even in cases wherediffraction orders in the second direction do not fall within the pupilof the detection system, target structures that are two-dimensional inboth sets of features suffer from cross-talk between overlay in thefirst direction and overlay in the second direction. The inventors havefurther recognized that a bias scheme that includes appropriatecombinations of bias values in both the first direction and the seconddirection can be used to obtain overlay measurements in the firstdirection that are corrected for the effects of periodic features andoverlay variations in the second direction.

In the example target 600, with respect to the first direction (Y),positive bias values +dy are programmed into the target structures 632and 635, displacing the second features upward in FIG. 6(a), whilenegative bias values −dy are programmed into the target structures 633and 634. With respect to the second direction (X), positive bias values+dx are programmed into the target structures 632 and 633, displacingthe second features to the right in FIG. 6(a), while negative biasvalues −dx are programmed into the target structures 634 and 635. Asillustrated in the views (b) and (c), the actual placement of the secondfeatures relative to the first features is a combination of theprogrammed bias value in each direction and the unknown overlay error inthat direction.

Thus the metrology target illustrated in FIG. 6 includes targetstructures with four different combinations of bias in the twodirections of periodicity. The target in this example clearly has the Ydirection as its primary direction, and segmentation in the X directionwill cause weaker diffraction. This target is therefore designedprimarily to measure overlay in the Y direction. A similar metrologytarget can be provided, if desired, arranged so that the primarydirection of periodicity is the X direction, allowing measurement ofoverlay more accurately in the X direction. A target in which periodiceffects are equally strong in both directions could be used to measureoverlay equally accurately in both directions.

Mathematical Model

Now let us consider how the intensities of the individual grating areaswithin the image are conventionally used to calculate (one-dimensional)overlay error Ov from a pair of (one-dimensional) biased gratings (FIG.4(a)). In a simplified linear approximation, the overlay OV iscalculated by using the intensities from the individual targetstructures (gratings 32-35):

$\begin{matrix}{{Ov} = {d\left( \frac{\left( {I_{+ d}^{+ 1} - I_{+ d}^{- 1}} \right) + \left( {I_{- d}^{+ 1} - I_{- d}^{- 1}} \right)}{\left( {I_{+ d}^{+ 1} - I_{+ d}^{- 1}} \right) - \left( {I_{- d}^{+ 1} - I_{- d}^{- 1}} \right)} \right)}} & (1)\end{matrix}$

where (I_(+d) ⁺¹−I_(+d) ⁻¹) represents the difference of intensitybetween +1 and −1 order diffraction signals from a target structure withbias value +d and (I_(−d) ⁺¹−I_(−d) ⁻¹) represents the difference ofintensity between +1 and −1 order diffraction signals from a targetstructure with bias −d.

Equation (1) can be re-written as:

$\begin{matrix}{{Ov} = {d\left( \frac{{As}_{+ d} + {As}_{- d}}{A_{s + d} - {As}_{- d}} \right)}} & (2)\end{matrix}$

where As_(+d) is an asymmetry value derived from the diffraction signalsfor the target structure with bias +d and As_(−d) is an asymmetry valuederived from the diffraction signals for the target structure with bias−d.

The above Equation (1) is derived from the assumption that there islinear relationship between asymmetry As and overlay error Ov:

As _(±d) =I _(±d) ⁺¹ −I _(±d) ⁻¹ =K*Ov  (3)

where K is a simple coefficient. In practice, an implementation may usea different model of the relationship. For example a sinusoidal model ofthe relationship is often used, in which case Equation (2) becomes:

$\begin{matrix}{{Ov} = {a\; {\tan \left( {\frac{{As}_{+ d} + {As}_{- d}}{{As}_{+ d} - {As}_{- d}} \cdot {\tan (d)}} \right)}}} & \left( 2^{\prime} \right)\end{matrix}$

In Equation (2′), the offset d is expressed as an angle, relative to 2πradians representing the period of the grating. For the purposes of thepresent description, the simple, linear model will be assumed. Theskilled person can readily implement the same principles using asinusoidal model or other preferred model, adapting the other Equation(3) as necessary.

In all the above equations, some scaling factors and normalizationfactors are omitted for simplicity. For example, as described in some ofthe prior published applications mentioned above, it may be convenientto normalize the differences between intensities using the average ofthose intensities as a denominator. So, for example, where above iswritten:

As _(±d) =I _(±d) ⁺¹ −I _(±d) ⁻¹  (3)

the full expression might be:

$\begin{matrix}{{As}_{\pm d} = {{2\left( \frac{I_{\pm d}^{+ 1} - I_{\pm d}^{- 1}}{I_{\pm d}^{+ 1} + I_{\pm d}^{- 1}} \right)} = {K*{Ov}}}} & \left( 3^{\prime} \right)\end{matrix}$

The shorter expression will be used for convenience in the presentdisclosure, while the person skilled in the art can incorporatenormalization and other practical details with routine skill andknowledge.

If each target structure were only one-dimensional, as in FIG. 4(a),then a single captured image 40 as shown in FIG. 5 has the completeinformation required to obtain independent measurements of overlay Ovwith respect to the X and Y directions. In the case where a grating inthe target has two-dimensional structure, however, the diffractionsignals for different directions become mixed and inter-dependent asdescribed above.

In terms of the mathematical model introduced above, the presence ofadditional orthogonal diffraction orders adds additional unknowns to theset of equations that must be solved to calculate Ov. Maintaining fornow the simplicity of a linear model, the dependence of asymmetry valueAs on overly error incorporates an additional term, illustrated inEquation (4) below.

As=K _(x) *Ov _(x) +K _(y) *Ov _(y) +K _(xy) *Ov _(x) *Ov _(y)   (4)

Here we see that the asymmetry observed in the diffraction signals froma given target structure results from the effects of the overlay Ov_(x)in the x direction and overlay Ov_(y) in y direction, and additionally a“cross-term” dependent on overlay in both directions. Coefficients K_(x)and K_(y) express the sensitivity of asymmetry to overlay in eachrespective direction. A third coefficient K_(yx) represents sensitivityto the cross-term (assuming for this explanation that the additionalterm depends also linearly on the product Ov_(x)*Ov_(y)). While thesecoefficients are represented in a mathematical model, their values arenot known in advance, similar to the coefficient K in theone-dimensional example. The coefficient K is calculated (implicitly atleast) when the Equation (2) or (2′) is applied to calculate ameasurement of overlay.

Considering the example metrology target 600 of FIG. 6, the number oftarget structures and combinations of programmed offsets in bothdirections, gives rise to the following four equations, representingasymmetry values for the four target structures 632, 633, 635 and 634respectively:

As _(+dx+dy) =K _(x)*(Ov _(x) +dx)+K _(y)*(Ov _(y) +dy)+K _(xy)*(Ov _(x)+dx)*(Ov _(y) +dy)

As _(+dx−dy) =K _(x)*(Ov _(x) +dx)+K _(y)*(Ov _(y) −dy)+K _(xy)*(Ov _(x)+dx)*(Ov _(y) −dy)

As _(−dx+dy) =K _(x)*(Ov _(x) −dx)+K _(y)*(Ov _(y) +dy)+K _(xy)*(Ov _(x)−dx)*(Ov _(y) +dy)

As _(−dx−dy) =K _(x)*(Ov _(x) −dx)+K _(y)*(Ov _(y) −dy)+K _(xy)*(Ov _(x)−dx)*(Ov _(y) −dy)   (5)

The asymmetry values themselves are obtainable from the diffractionsignals, extracted for example from an image of the type shown in FIG.5. However, this set of four equations has five unknowns: Kx, Ky, Kxy,Ovx and Ovy, and so is not solvable with standard techniques.

The inventors have recognized that, by obtaining a second set ofdiffraction signals under different conditions, an additional set ofequations can be added. This second set of diffraction signals resultsin the additional set of equations:

As _(+dx+dy) ′=K _(x)′*(Ov _(x) +dx)+K _(y)′*(Ov _(y) +dy)+K _(xy)′*(Ov_(x) +dx)*(Ov _(y) +dy)

As _(+dx−dy) ′=K _(x)′*(Ov _(x) +dx)+K _(y)′*(Ov _(y) −dy)+K _(xy)′*(Ov_(x) +dx)*(Ov _(y) −dy)

As _(−dx+dy) ′=K _(x)′*(Ov _(x) −dx)+K _(y)′*(Ov _(y) +dy)+K _(xy)′*(Ov_(x) −dx)*(Ov _(y) +dy)

As _(−dx−dy) ′=K _(x)′*(Ov _(x) −dx)+K _(y)′*(Ov _(y) −dy)+K _(xy)′*(Ov_(x) −dx)*(Ov _(y) −dy)   (6)

where the prime symbol ′ indicates (observed) asymmetry values and(unknown) coefficients that are applicable to the second diffractionsignals. The overlay values in each direction are the same for both setsof diffraction signals. Therefore the second diffraction signals bringfour additional equations but only three additional unknowns. Whencombined with the previous set of equations (which had 5 unknowns), theycan be solved for Ovx and Ovy.

FIG. 7 shows two images 740(1) and 740(2) obtained by two image capturesteps in a method according to a first embodiment of the presentdisclosure. Each image captures diffraction signals from the targetillustrated in FIG. 6, but using different capture conditions. Eachimage 740(1) and 740(2) is of the same form as that shown in FIG. 5,with four spatially separated images 702(1/2)-708(1/2) of the target. Asdescribed already for FIG. 5, each image 702(1/2) is formed of radiationdiffracted by the target in the negative X direction and the positive Ydirection (labelled −x/+y). Each image 706(1/2) is formed of radiationdiffracted in the positive X direction and the negative Y direction(+x/−y). A spot indicates the region representing diffraction signals ofthe individual target structure 632 in each case. The difference betweenthem is that images 702(1) and 706(1) are a record of first diffractionsignals captured under first capture conditions while images 702(2) and706(2) are a record of second diffraction signals captured under secondillumination conditions different from the first illuminationconditions.

The first and second capture conditions can differ in one or moreparameters chosen from a wide variety of operating parameters of theinspection apparatus and its operation. For example the difference maybe in illumination conditions used for the capture of diffractionsignals, such that first illumination conditions and second illuminationconditions differ in one or more of radiation wavelength, radiationpolarization, and angular distribution of illumination. The differencemay be not in the illumination conditions, or not only in theillumination conditions, but also there may be difference in conditionson the detection side. For example a wavelength filter, a difference inaperture and/or a difference in polarization can all be applied at thedetection side, by suitable filters, for example. References todifferences in capture conditions should therefore be understood toinclude any differences in the conditions, ranging from the sourceitself, through the illumination path and the collection path, andthrough to the detector and processing of signals.

Due to the different capture conditions used in capturing images 740(1)and 740(2), asymmetry values calculated from their diffraction signalswill have different sensitivities to overlay in the differentdirections. First asymmetry values calculated from the first diffractionsignals represented in image 740(1) can be used as asymmetry values Asinput to the equations (5) above, while second asymmetry values As′, forthe same target structures, can be calculated from the seconddiffraction signals in image 740(2) and used as input to the equations(6) above. With a total of 8 equations, the 8 unknowns can becalculated. These unknowns include the overlay errors Ov_(x) and Ov_(y)in the two directions, so that the desired overlay measurement can beobtained.

The obtained overlay measurement, for example OVy in case of the targetshown in FIG. 6, will be subject to reduced sensitivity to variation ofoverlay in the second direction, even though the target structures havestrongly two-dimensional features. Note also that the calculation, andthe mathematical model underlying it, makes no assumption that aparticular target structure or diffraction signal or asymmetry value isrepresenting asymmetry and overlay in a particular direction. Thecalculation is therefore valid even when the effects of overlay in bothdirections are completely mixed in the captured diffraction signals.With the appropriate choice of bias scheme and solution of thesufficient number of simultaneous equations, the overlay error specificto each direction can be calculated to obtain a desired measurement. Thedesign of target structures can of course be optimized so that aparticular target gives a more reliable (accurate) measurement ofoverlay in one direction than the other. The primary periodicity willtypically be the first direction in the language of the introduction andclaims, and could be the X direction, the Y direction, or any arbitrarydirection.

Application Example

FIG. 8 illustrates a method of measuring performance of a lithographicprocess using the apparatus and methods outlined above. In step S20, oneor more substrates are processed to produce a metrology target includinga plurality of target structures. The design of target can be forexample the design shown in FIG. 6 and described above. Other designsare of course possible, including examples described below. Targets maybe large target or small target designs, depending whether the firstmeasurement branch or second measurement branch of the apparatus is tobe used. Targets may comprise a plurality of target structures indistinct areas. For the purposes of the present description, it isassumed that overlay is of interest as a performance parameter of thelithographic manufacturing process.

At step S20 a substrate is loaded into an inspection apparatus, such asthe inspection apparatus of FIG. 2. The substrate is one on which targetstructures (and optionally also functional device structures) have beenproduced using the lithographic manufacturing system of FIG. 1. For thispurpose, a set of patterning devices will be provided, to definefeatures of device structures and metrology targets through a series ofpatterning operations, interleaved with chemical and physical processingsteps. One of these patterning devices will define, directly orindirectly, the first features of a plurality of target structuresimplementing the principles of the present disclosure. Anotherpatterning device will define, directly or indirectly, the secondfeatures. The positions of the first and second features in thepatterning devices include the programmed offsets for a two-dimensionalbias scheme. If the lithographic tool used for some or all of thepatterning steps uses a programmable patterning device, then the set ofpatterning devices may include one or more sets of patterning data,rather than physical reticles.

In step S21 metrology recipes are defined, including a recipe for ameasurement of overlay using two or more sets of diffraction data, suchas the ones captured in the images described above with reference toFIG. 7. All the usual parameters of such a recipe are defined, includingthe wavelength polarization, angular distribution and so forth ofilluminating radiation.

In accordance with the principles of the present disclosure, the recipedefines two (or more) different sets of parameters, from which the firstand second diffraction signals are obtained. In a first example, thedifference between the first and second diffraction signals is thewavelength of the illuminating radiation. In other embodiments,different polarizations may be defined, or different angulardistributions of illuminating radiation (illumination profiles) may bedefined. As mentioned above, one also use different detectionparameters, e.g. aperture or wavelength or polarization filtering in thedetection path. In other embodiments, described below with reference toFIGS. 10 and 11, the recipes may specify different subsets of the targetstructures to be used for obtaining the first and second diffractionsignals, under a single set of capture conditions.

In step S22, the inspection apparatus is operated to capture two or moresets of diffraction signals from the plurality of target structures.These may for be dark-field images (such as images 740(1) and 740(2) inFIG. 7) using the specified capture conditions/subsets.

As illustrated by the dotted box, third and further sets of diffractionsignals can be obtained using yet further different capture conditionsand/or target subsets. The mathematical discussion above have shown thatby switching to a different capture condition, the variables Ov_(x) andOv_(y) remain constant while other new unknowns are introduced. Thismeans that, with every additional change of capture conditions, and thusthe introduction of a new set of equations, the number of unknowns getscloser to the number of equations. In a case where, when using the firstand second diffraction signals together, there remain more unknowns thanequations the process can be repeated with third diffraction signals,fourth diffraction signals up to any number. With enough changes, thenumber of equations becomes equal to the number of unknowns and thus theequations can be solved. Thus this method can be applied to anymathematical model that has any number of unknowns: enough equations canbe generated as long as the number of available wavelengths permitsadditional items.

A different model may imply a greater number of coefficients, requiringadditional diffraction signals to solve a system having more than eightunknowns. Even in the case of a linear model featuring coefficientsK_(x), K_(y) and K_(xy), which is solved by the two sets of fourasymmetry values, additional accuracy in the measured overlay values canresult from capturing additional diffraction signals and solving alarger set of equations for the parameters of interest. For example,using three or four target structures to obtain a third set ofdiffraction signals one can construct a system of equations in 11unknowns: the 8 mentioned above plus three new K values. Provided three,four or more new asymmetry values are obtained, with only three newadditional coefficients. Adding another capture with third diffractionsignals will therefore bring additional accuracy to the measurements ofthe parameters of interest, such as overlay.

It goes without saying, any of these captures may in practice beperformed multiple times, with the result being averaged to reducerandom noise. It will also be understood that the captures may berepeated for multiple targets across the substrate.

At step S23 asymmetry values As and As′ are calculated from the captureddiffraction signals of the various target structures. In the exampleusing dark-field imaging and segmented illumination and detectionoptics, these asymmetry values can be derived by selecting and combiningpixel intensities from different regions of interest within one or moredark-field images. First asymmetry values As can be calculated from thefirst diffraction signals captured in image 740(1), while secondasymmetry values As′ can be can derived from the second diffractionsignals captured in image 740(2).

At step S24, once sufficient asymmetry values have been obtained for thenumber of unknowns, the full set of equations can be solved to calculateone or more parameters of interest relating to the target structuresand/or relating to the performance of the lithographic process by whichthe target structures have been formed. Parameters of interest includein particular the directional overlay values Ov_(x) and Ov_(y).Parameters of interest may be simply whether the image of a targetstructure contains a mixture of radiation diffracted in two directionsor not. The value of cross-coefficient K_(xy) relative to K_(x) and/orK_(y) can be used, for example, as an indicator of significanttwo-dimensional character.

Note that any resulting set of equations in any of the aforementionedmethods can be solved by using numerical techniques, and does notrequire an analytical solution. Solution for all the variables may beleft as merely an implicit step, while only the parameters of interest(e.g. overlay Ov in one or both directions) are calculated and outputexplicitly.

At step S25, the metrology recipe may be updated in response to theobtained measurements and ancillary data. For example, the metrologytechniques for a new product or target layout may be under development.Information about the two-dimensional characteristics can be used toselect a more appropriate recipe.

In step S26, in a development and/or production phase of operating thelithographic production facility of FIG. 1, recipes for the lithographicprocess may be updated, for example to improve overlay in futuresubstrates. The ability to measure overlay more accurately in one orboth different directions allows more effective corrections to bedeveloped and applied. The techniques disclosed herein are fullycompatible with the efficient measurement techniques using segmentedillumination and segmented detection systems, including when targetstructures have significant two-dimensional structure. An inspectionapparatus can be used with a fixed, segmented detection system, whilecovering a full range of targets, reducing cost and size of theapparatus.

The calculations to obtain measurements, and to control the selection ofwavelengths and other recipe parameters, can be performed within theimage processor and controller PU of the inspection apparatus. Inalternative embodiments, the calculations of asymmetry and otherparameters of interest can be performed remotely from the inspectionapparatus hardware and controller PU. They may be performed for examplein a processor within supervisory control system SCS, or in any computerapparatus that is arranged to receive the measurement data from theprocessor and controller PU of the inspection apparatus. Control andprocessing of the calibration measurements can be performed in aprocessor separate from that which performs high-volume calculationsusing the correction values obtained. All of these options are a matterof choice for the implementer, and do not alter the principles appliedor the benefits obtained. Use of the term “processor” in the descriptionand claims should be understood also to encompass a system ofprocessors.

Additional Example of First Embodiment

FIG. 9 illustrates (a) a target 900 similar to the target 600 of FIG. 6and (b) implementation of part of the method of FIG. 8 using such atarget. The target 900 comprises four target structures 932, 933, 934,935. Each target structure in this example has the X direction as itsprimary direction of periodicity, and is intended for accuratemeasurement of overlay Ov_(x) in the X direction. Segmentation in the Ydirection may be present but is not visible on the scale of the drawing.Programmed offsets in X and Y directions are included in the relativeplacement of the first and second features in each target structure. Asshown by labels “+dx+dy” etc., these offsets implement a bias schemewith four combinations of offset the same as the one shown in FIG. 6.

As shown in FIG. 9 (b), in step S22 two sets of diffraction signals arecaptured from the four target structures. When using the inspectionapparatus of FIG. 2, all four target structures 933-935 are illuminatedsimultaneously within the illumination spot 931. The inspectionapparatus captures first and second diffraction signals in twodark-field images 740(λ1) and 740(λ2). The dark-field images in thisexample are examples of the images 740(1) an 740(2) shown in FIG. 7. Theindex labels λ1 and λ2 indicate that the wavelength of radiation used tocapture the first and second diffraction signals is different.Predictably, the result will be a difference in the angle of spread ofthe diffraction orders from the gratings formed by the first and secondfeatures. Importantly, however, the interaction of the radiation withthe stack of layers defining the target structures may be different in anumber of ways, not necessarily predictable or known. Particulardifferences in interaction can result from the three-dimensional natureof the target structure, in which the thickness and material propertiesof the layers L1 and L2 and intervening layers all influence propagationof the inspection radiation. Each set of diffraction signals will besensitive in different ways to overlay and to process variations in thedifferent parameters. In terms of the mathematical model presentedabove, the coefficients K′ will be different when using the secondwavelength than coefficients K when using the first wavelength.

In step S23 first and second asymmetry values As and As′ are derived foreach target structure. These are combined in step S24 to obtain ameasurement of overlay in at least the first direction, being the Xdirection in this example.

Depending on the construction of the inspection apparatus, the first andsecond diffraction signals can be captured sequentially orsimultaneously. Selection of wavelengths can be through color filter 12b, or by a tunable or switchable source 11. Illumination with multiplewavelengths could be used, with filtering at the detection side. Thechoice of wavelengths can be made based on calculation and/or experimentwith the designs of target structure, with the aim of ensuring asignificant difference between the first coefficients K and the secondcoefficients K′, thereby to maximize the information content of theasymmetry values when combined together. Other examples of the firstembodiment can be made by switching other parameters such as thepolarization (filter 12 c) or angular distribution (aperture device 13)of the illumination system. As mentioned, parameters can also beswitched in the detection system, in addition to or as an alternative tothe illumination system.

Second Embodiment

FIG. 10 illustrates (a) a different form of target and (b)implementation of part of the method of FIG. 8 using such a target in asecond embodiment. The target 1000 comprises eight, rather than four,target structures. The eight target structures are divided into twodistinct subsets, indicated by suffixes ‘a’ and ‘b’. As in FIG. 9, eachtarget structure in this example has the X direction as its primarydirection of periodicity, and is intended for accurate measurement ofoverlay Ov_(x) in the X direction. Segmentation in the Y direction maybe present but is not visible on the scale of the drawing. A firstsubset of target structures comprises four target structures 1032 a,1033 a, 1034 a and 1035 a. A second subset of target structurescomprises four target structures 1032 b, 1033 b, 1034 b and 1035 b.Within each subset, programmed offsets in X and Y directions areincluded in the relative placement of the first and second features ineach target structure. As shown by labels “+dx+dy” etc., these offsetsimplement in each subset a bias scheme with four combinations of offsetthe same as the one shown in FIG. 6.

As shown in FIG. 10 (b) in conjunction with FIG. 11, in step S22 twosets of diffraction signals 740(a) and 740(b) are captured. The captureconditions in this embodiment are assumed to be the same for both thefirst diffraction signals and the second diffraction signals. This mayreduce measurement time. The difference between the first and seconddiffraction signals is achieved by a difference in design between thefirst and second subsets of target structures. It will be seen that theeight target structures are made smaller in the second direction, sothat they can all fit within the same illumination spot 1031 and fieldof view of the apparatus. In this way, both sets of diffraction signalscan be captured from regions within a single dark-field image 740(a/b).If preferred, the target structures could be kept at the same size asthe targets 600 and 900, but additional capture steps would then berequired to obtain a full set of diffraction signals, and additionalerrors could be introduced through inconsistency of the captureconditions.

The inspection apparatus in this example captures first and seconddiffraction signals 740(a) and 740(b) and the index labels a and bindicate that the target structure design used to capture the first andsecond diffraction signals is different. Any kind of difference that canbe reliably produced in the lithographic process may be considered. Thetarget structures may have different pitches and/or duty cycles in oneor both of the directions. As another simple difference, one subset oftarget structures may have a “line on line” layout while the othersubset has a “line on trench” layout. In a line on line layout, thesecond features lie directly on top of corresponding first features, asshown in the FIG. 6 (b) cross-section. In the line on trench layout, thesecond features lie over the spaces between the first features. In anycase, the interaction of the radiation with the stack of layers definingthe target structures may be different in a number of ways between thetwo subsets of target structures, in ways which are not necessarilypredictable or known. Each set of diffraction signals will be sensitivein different ways to overlay and to process variations in the differentparameters. In terms of the mathematical model presented above, thecoefficients K′ will be different for the second subset thancoefficients K for the first subset.

In step S23 a first asymmetry value As is derived for each targetstructure 1032 a-1035 a within the first subset, and a second asymmetryvalue As′ are derived for each target structure within the secondsubset. These four values As and four values As′ are combined in stepS24 to obtain a measurement of overlay in at least the first direction,being the X direction in this example.

It will be understood that third, fourth and further subsets withfurther different designs can be included, if third, fourth etc. sets ofdiffraction signals are required. Additionally, the techniques of thefirst and second embodiments can be combined so that, for example, twodifferent capture conditions are used to obtain diffraction signals fromtwo different subsets of target structures. Immediately this yields fourset of diffraction signals. By proper design of the different subsetsand by proper and choice of capture conditions, additional unknowns canbe solved. Alternatively, rather than solving a single large set ofequations, independent calculations of the overlay error can be madeusing (say) first and second diffraction signals together and third andfourth diffraction signals together. In this way, without complicatingthe mathematical model and its solution, the same Ov values can bemeasured multiple ways, and combined to increase the overlay accuracyperformance of the inspection apparatus.

Finally, as mentioned above, while the above techniques can be used tomeasure a property of the target independently in two directions, it mayalso be used as a simple check to see whether significanttwo-dimensional structure in both sets of features is present or not. Ifnot, then a single set of diffraction signals may be sufficient formeasurement of further targets, saving time. If significanttwo-dimensionality is present, indicated for example by a significantvalue K, in one of both sets of diffraction signals, then the techniquesof the present disclosure can be applied to obtain accurate measurementsof overlay in one or both directions.

Modified Embodiment

FIG. 12 illustrates (a) a target 1200 similar in function to the target1200 of FIG. 6, but with modifications that will now be described. Thetarget 1200 comprises four target structures 1232, 1233, 1234, 1235.Each target structure in this example has the both the X direction andthe Y direction as primary directions of periodicity. As a simpleexample, each first feature 1262 may comprise a square structure on thesubstrate with X-Y dimensions 200 by 200 nm, and the pitch Px and Py maybe 800 nm in both directions. Each of the first features and each of thesecond features therefore has the same dimension in both the X directionand the Y direction. In alternative implementations, the dimensionsand/or the pitch can be made different in the two directions. It will beunderstood that the features and their spacing are representedschematically, and are not shown to scale, nor in their true numbers. Asin the previous examples, each first feature and/or each second featuremay be sub-segmented into smaller features, in one or two directions,this sub-segmentation not being visible on the scale of the drawing. Inthe following examples, the first and second features will beillustrated and described as if they are unitary features, purely forsimplicity. Programmed offsets in X and Y directions are included in therelative placement of the first features 1262 and the second features1264 in each target structure. As shown by labels “+dx+dy” etc., theseoffsets implement a bias scheme with four combinations of offset. Thecombinations are the same as the ones shown in FIG. 6, but arranged in adifferent relationship to one another. The bias scheme of FIG. 6 isequally suitable, as will be understand from a consideration of theprinciples explained below. Also, this target is designed to have a highdegree of symmetry, to reduce sensitivity to aberrations of the opticalsystem, and to make it compatible with a existing metrology methods andapparatuses.

A main difference between the FIG. 12 target and the ones describedabove is that the target structures are formed in one continuous array.FIG. 12 (b) shows one layer of the target 1200, comprising the firstfeatures 1262 only. This may be for example the bottom layer of theoverly metrology target 1200. As can be seen, the first features 1262are formed in a continuous periodic array, with no gaps between distincttarget structures. FIG. 12 (c) is an enlarged view of a central portionof the target 1200, corresponding to the dashed circle in FIGS. 12(a)and (b). Here it can be seen that the four target structures 1232, 1233,1234, 1235 are simply four regions of this larger, continuous array, inwhich the programmed positional offset (overlay bias) is different fromone region to the next. The programmed positional offset in each regioncan be represented conveniently by bias vectors, which are shown in eachregion of FIG. 12 (c).

In the illustrated example, it is assumed that the first features definethe bottom layer of the overlay metrology target, and the secondfeatures are in a top layer, applied subsequently. The programmedoffsets are in the placement of the second features 1264 in each region,while the array of first features is entirely regular. This is only onepossible example, however, and the programmed offsets may be in thebottom layer, in the top layer or in both. One benefit of providing thefeatures of the bottom layer in a continuous array is to reduce theprocess effects impacting this structure. Furthermore, any processvariations that are to be corrected can be modelled over the completetarget. In certain processes and designs, however, there may be benefitsto putting the programmed offsets in the first layer, and a regulararray in the top layer.

There is in principle a risk that the diffraction signals will includecross-talk due to edge effects between the different target structures.The absence of gaps between the target structures, and the uniformity ofthe array in both directions are factors that may help to reduce edgeeffects. Moreover, the selection of which target structures to placenext to one another in the metrology target can also be done so as toreduce noise due to edge effects. As seen by the vectors in FIG. 12 (c),for example, the arrangement is such that each target structure has twoimmediate neighbors. The bias scheme is designed so that the programmedoffset of each target structure is intermediate between the programmedoffsets of its immediate neighbors. In terms of the bias vectors, thebias vector rotates only 90 degrees from each target structure to thenext. The target structures may be considered to be arranged in a ring,which can be traversed clockwise or counter-clockwise, with the biasvector stepping always by at most 90 degrees. The arrangement avoidshaving a common border between, for example, two target structures withbias vectors pointing in opposite directions. While edge effects areinevitable when radiation is diffracted by a finite structure, carefuldesign can minimize them. By minimizing edge effects, the signal noisecan be reduced, or other constraints can be relaxed. For example, theoverall size of the metrology target may be able to be reduced, and/orthe positional accuracy of the target and the regions of interest (ROI)can be relaxed.

FIG. 13 illustrates just the central detail from a metrology target 1300that is a further modification of the metrology target of FIG. 12. Inthis example, narrow transition zones 1302 are provided between theneighboring target structures, in which the bias vector is intermediatebetween the bias vectors of the target structures to either side. Such atransition zone, although it is “wasted space” from one point of view,can help to improve accuracy by reducing edge effects. In principle, thevariation of bias could be continuous from each feature to the next,without deviating from the principles of the present disclosure. In sucha case, however, the signals may become too sensitive to errors inplacement of the regions of interest ROI.

Third Embodiment

FIG. 14 (a) shows a metrology target 1400 according to a thirdembodiment of the present disclosure. In detail, the target has the samebasic structure as the targets 1200 and 1300 described above. That is tosay, a plurality of target structures are formed as neighboring regionsof a larger, continuous array. In this target, however, the number ofregions is greater than four, and comprises eight outer regions arrangedin a ring around a central region. Numbering from the top left andproceeding counter-clockwise, the eight outer regions form respectivetarget structures 1432-1 to 1432-8. As in the previous example, aprogrammed positional offset (overlay bias) is different from one regionto the next. The programmed positional offset in this example isrepresented conveniently by a bias vector, which is shown in each regionof FIG. 14 (a). The central region optionally provides forms a centraltarget structure 1432-0. As described below, the central targetstructure may be used for different purposes. For the present, it may beassumed to have a zero bias, represented by a simple dot.

The form of the first features and second features may be assumed to bethe same as in the examples of FIGS. 12 and 13 (feature size 200×200 nmand pitch Px=Py=800 nm). If the overall size of each continuous array isthe same as in FIG. 12, then of course each target structure will besmaller. Alternatively, the overall size of the target can be increasedto achieve a desired size of individual target structure. The overallsize in one example is 16×16 μm.

In the terminology of the introduction and claims, the eight targetstructures 1432-1 to 1432-8 together provide both the first subset oftarget structures and the second subset of target structures in onemetrology target. All eight target structures can be imaged in a singlecapture step, if desired, and the diffraction signals from all thetarget structures can be processed as one large set. The division intosubsets in such an embodiment is to some extent arbitrary, since theonly difference between them is the overlay bias applied. For thepurposes of the present description, however, it is convenient toconsider that the odd-numbered target structures (1432-1, -3, -5, -7)form a first subset and the even-numbered target structures (1432-2, -4,-6, -8) form a second subset. It will be seen that the bias scheme ofthe first subset of target structures is the same as the bias scheme ofthe target 1200 in FIG. 12.

The second subset of target structures (1432-2, -4, -6. -8), arepositioned with each one in between two target structures of the firstsubset. The bias scheme of the second subset is such that each targetstructure has a programmed offset in the X and Y directions that isintermediate between its neighbors on either side. As a result, anytarget structure bordering two neighboring target structures has aprogrammed offset intermediate between the programmed offsets of thosetwo neighboring target structures (disregarding the central region whichis not one of the target structures for this purpose). In terms of biasvectors, it will be seen that the bias vector now rotates less than 90degrees between neighboring target structures. More particularly, inthis example, the bias vector representing said programmed offsetrotates 45 degrees between neighboring target structures.

The progressive change of the programmed offset from neighbor toneighbor, together with the use of a single continuous array of featureshas the benefit of reducing edge effects, in the same manner asdescribed already about for the examples of FIGS. 12 and 13. As alreadyexplained, this mitigates the loss of allows signal quality that wouldnormally be incurred by fitting a greater number of targets to be fittedinto a smaller total area. Effectively, the detailed structure of target1400 is the same as shown in FIG. 13, but with the transition zones 1310wide enough to form target structures in their own right. Narrowtransition zones (not shown) could be provided between the regions inmetrology target 1400, the same manner as in FIG. 13. The transitionzones would have bias angles rotated less than 45 degrees from thetarget structures on either side.

Referring now to FIG. 14 (b), this shows part of a multiple image 1440of the target, captured by the apparatus of FIG. 4 with spatialseparation of diffraction orders. To save space, only the +1 and −1diffraction order images are shown, and labeled 1440(+1) and 1440(−1)respectively. The signals are processed in essentially the same manneras in the first and second embodiments, except that sufficientdiffraction signals for an overlay measurement are obtained from asingle capture of the composite metrology target 1400. This does notexclude the possibility of increasing accuracy by obtaining additionaldiffraction signals using different radiation characteristics. Nor doesit exclude the possibility of providing additional targets withdifferent design parameters. It just means that sufficient signals tosolve the required system of equations can be obtained from the signaldiffraction image 1440.

FIG. 14(b) is overlaid with a schematic representation of signalprocessing to obtain asymmetry values As from the eight targetstructures. A first asymmetry value As₁ is obtained by comparing theopposite order diffraction signals from regions of interest (ROI)corresponding to the top right target structure 1432-7. As anotherexample, a fourth asymmetry value As₄ is obtained by comparing theopposite order diffraction signals from regions of interest (ROI)corresponding to the bottom left target structure 1432-3. Numbers incircles identify the correspondence between each target structure and arespective asymmetry value As_(i), given a total of eight asymmetryvalues from the single diffraction image.

Given these eight asymmetry values As₁ to As₈ obtained as shown in FIG.14 (b), overlay can be determined by solving a system of equationssimilar to those described above. For the present example, the equationsimplement a sinusoidal model of the relationship between asymmetry valueand overlay, rather than the simple linear approximation. The set ofequations for the target 1400 is thus:

${AS}_{1} = {{K_{x}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} + d_{x}} \right)} \right)}} + {K_{y}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} + d_{y}} \right)} \right)}} + {K_{xy}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} + d_{x}} \right)} \right)}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} + d_{y}} \right)} \right)}}}$${AS}_{2} = {{K_{x}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} + d_{x}} \right)} \right)}} + {K_{y}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} - d_{y}} \right)} \right)}} + {K_{xy}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} + d_{x}} \right)} \right)}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} + d_{y}} \right)} \right)}}}$${AS}_{3} = {{K_{x}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} - d_{x}} \right)} \right)}} + {K_{y}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} + d_{y}} \right)} \right)}} + {K_{xy}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} + d_{x}} \right)} \right)}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} + d_{y}} \right)} \right)}}}$${AS}_{4} = {{K_{x}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} - d_{x}} \right)} \right)}} + {K_{y}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} - d_{y}} \right)} \right)}} + {K_{xy}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} - d_{x}} \right)} \right)}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} - d_{y}} \right)} \right)}}}$${AS}_{5} = {{K_{x}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} + d_{x}} \right)} \right)}} + {K_{y}{\sin \left( {\frac{2\pi}{P}\left( {OV}_{y} \right)} \right)}} + {K_{xy}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} + d_{x}} \right)} \right)}{\sin \left( {\frac{2\pi}{P}\left( {OV}_{y} \right)} \right)}}}$${AS}_{6} = {{K_{x}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} - d_{x}} \right)} \right)}} + {K_{y}{\sin \left( {\frac{2\pi}{P}\left( {OV}_{y} \right)} \right)}} + {K_{xy}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{x} - d_{x}} \right)} \right)}{\sin \left( {\frac{2\pi}{P}\left( {OV}_{y} \right)} \right)}}}$${AS}_{7} = {{K_{x}{\sin \left( {\frac{2\pi}{P}\left( {OV}_{x} \right)} \right)}} + {K_{y}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} + d_{y}} \right)} \right)}} + {K_{xy}{\sin \left( {\frac{2\pi}{P}\left( {OV}_{x} \right)} \right)}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} + d_{y}} \right)} \right)}}}$${AS}_{8} = {{K_{x}{\sin \left( {\frac{2\pi}{P}\left( {OV}_{x} \right)} \right)}} + {K_{y}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} + d_{y}} \right)} \right)}} + {K_{xy}{\sin \left( {\frac{2\pi}{P}\left( {OV}_{x} \right)} \right)}{\sin \left( {\frac{2\pi}{P}\left( {{OV}_{y} + d_{y}} \right)} \right)}}}$

If we assume that the ninth region provides a target structure 1432-0with zero bias, the equation for its asymmetry value As₀ would be alinear combination of the above eight equations and does not addinformation. In matrix notation, the matrix rank remains 8, with orwithout the ‘no-bias’ case. This raises the possibility to use thecentral region for other purposes, as will be described below.

FIG. 15 illustrates implementation of part of the method of FIG. 8 usingsuch a target in accordance with the third embodiment of the presentdisclosure. In step S23 asymmetry values As for both first subset of thetarget structures and the second subset of the target structures areobtained from the captured diffraction signals. The illustration showsthese being treated as a single set of asymmetry values for furthercalculation. Rather than requiring separate captures.

Because all the target structures have the same target design parametersand the diffraction signals are all captured with the same radiationcharacteristics, there is no difference in coefficients K or period P,between the different target structures. In other words, there are onlyfive unknowns and, in principle, only five of these equations should besufficient to solve all unknowns. However, it may be expected thatincreased accuracy can be obtained by using six, seven or eight. Ifusing fewer than eight, it would be recommended to choose targetstructures having a good balance of programmed offsets in bothdirections. This is easier to achieve if one uses more than 5 values. Inother embodiments, however, the number of target structures over thefirst and second subsets may be fewer than eight in any case.

Numerous variations of the metrology target 1400 can be envisaged,without departing from the principles set forth above. The regionsdefined by different programmed offsets do not all have to be equal insize. Some could be larger, to give higher signal quality, while othersare smaller. For example, it could be decided to provide a smaller areafor target structures with mixed (X and Y) biases, and larger areas toprovide more emphasis on single direction bias. (The central region canbe smaller, too. The regions do not need to be square. The examplesshown have bias vectors of different lengths, depending whether thetarget structure has a mixed (X and Y) positional offset, or a singledirection offset (X only or Y only). As another modification, themagnitude of the offset in each direction could be different betweendifferent target structures for example to make the bias vectors moreequal in length. For example, to have a uniform length of bias vector of20 nm, the bias in target structure 1432-8 may be for example (0, 20),while the bias vector in target structure 1432-7 would be (20 h√2, 20h√2), or approximately (14, 14). As another variation, the single biastarget structures could be arranged at the corners of the target, withthe mixed bias regions in between.

Additionally, as mentioned, the central regions which are not used foroverlay measurement target structures can be used for additionalpurposes. As one example of this, instead of a zero-bias overlay target,the second features (top-grating) can be omitted entirely. This enablesa measurement of the first layer by itself, so that asymmetry value AS₀provides a measurement of bottom-grating asymmetry as a usefulperformance parameter. In alternative embodiments, the bottom-gratingcould be left-out, or both gratings.

Modified Third Embodiment

FIG. 16 (a) illustrates an enlarged metrology target according to amodified third embodiment of the present disclosure. FIG. 16 (b) showspart of a multiple image of the target, captured by the apparatus ofFIG. 4. In detail, the target has the same basic structure as thetargets 1200, 1300 and 1400, described above. That is to say, aplurality of target structures 1632-1 etc, are formed as neighboringregions of a larger, continuous array. In this target, however, thenumber of regions is 49, arranged in a square array of 7×7 regions. Theprogrammed positional offset is again represented conveniently by a biasvector, which is shown in each region. The bias scheme is again suchthat any target structure bordering two neighboring target structureshas a programmed offset intermediate between the programmed offsets ofthose two neighboring target structures (disregarding the regions withzero bias, which are not one of the target structures for this purpose).In terms of bias vectors, it will be seen that the bias vector againrotates less than 90 degrees between neighboring target structures.Again, in this example, the bias vector representing said programmedoffset rotates 45 degrees between neighboring target structures. Also,this target is designed to have 180-degree rotational symmetry, toreduce sensitivity to aberrations of the optical system, and forcompatibility with other metrology methods.

The form of the first features and second features may be assumed to bethe same as in the examples of FIGS. 12 and 13 (feature size 200×200 nmand pitch Px=Py=800 nm). If the overall size of each continuous array isthe same as in FIG. 12, then of course each target structure will besmaller. Alternatively, the overall size of the target can be increasedto achieve a desired size of individual target structure. The overallsize in one example is 16×16 μm.

In FIG. 16 (b), the corresponding portions of the diffraction image areagain numbered, to show which diffraction signals yield which of theasymmetry values As₁ to As₈ in the equations above. Each differentprogrammed offset occurs at least four times in different targetstructures across the array. Four of the programmed offsets occur moretimes. This provides redundancy of signals for solving the eightequations. This redundancy can be exploited in a number of differentways, which will now be described.

The 44 target structures (regions having non-zero programmed offsets)can be viewed in different groups. These different groups can be used asoverlay targets for different layer pairs in a device manufacturingprocess. The first features can be made in a continuous array in a firstlayer, for example, and then the second features in a can be added in asecond layer over a first part of the array to define a first group oftarget structures. Second features can be added over a second part ofthe array to define a second group of target structures, and so on.Provided each group has a set of five or more different programmedoffsets, for example seven or eight different programmed offsets, thefirst group of target structures can be used to measure overlay for thesecond layer over the first layer, while the second group of targetstructures can be used to measure overly for the third layer over thefirst layer.

Referring now to FIG. 17, two different options are illustrated forchoosing such groups, given the basic design of target 1600. Referringto FIG. 17 (a), it will be noticed that some of the target structuresdefine closed rings with their neighbors, each one similar in layout tothe target 1400. Four groups can be defined as shown by the boundarieslabeled 1700-1 to 1700-4. Each of these groups contains the full set ofeight programmed offsets. FIG. 17 (b) shows another sub-division of thesame basic target design into groups. As shown by the boxes labeled1702-1 to 1702-4, the first, third, fifth and seventh rows of regionscan be used to provide four groups of target structures in which thetarget structures of each group are arranged in a line. Each of thelines contains seven of the set of eight different programmed offsets.As mentioned above, anything from five to eight different programmedoffsets will be enough to solve the system of equations necessary for anoverlay measurement.

Within each group, any target structure bordering two neighboring targetstructures has a programmed offset intermediate between the programmedoffsets of those two neighboring target structures. Therefore, eachgroup of target structures effectively can be used as an independentmetrology target and can be assigned to a different top- orbottom-grating (multi-layer target). As mentioned already, if it suits aparticular process, it may be the top grating that is formed as acontinuous array without positional offsets, while the programmedoffsets are included in lower layers formed before the top layer.

Instead of using different groups for different layers, the redundancyin the target of FIG. 16 can be exploited to obtain additionalinformation relating to a single layer pair. For example, the resultsfrom a single bias value, measured at different locations on the target,can be used for correcting process variations that may occur over thearea of the target, or variations in the inspection tool itself, such asin homogeneity of the radiation spot. While groups are shown in FIG. 17as squares or lines of neighboring target structures, other schemes arepossible in which a group comprises target structures distributedwidely, even randomly across the larger target.

The numerous variations described above in relation to the thirdembodiment can be applied equally in the modified third embodiment.

The central no-bias regions can again be used to measure bottom gratingasymmetry or other parameters. Where the larger target provides multiplesuch regions, the variation of these parameters can be measured acrossthe target. The central no-bias regions can of course be used asadditional input to overlay calculations, to improve robustness againsteffects such as grating asymmetry.

CONCLUSION

The principles disclosed above allow measurement accuracy to bemaintained when target structures have two-dimensional characteristicsin both first features and second features. The technique is suitablefor application in asymmetry measurements to be made by dark fieldimaging methods, using segmented detection systems, as well as othermethods. Use of two or more sets of capture conditions, and/or two ormore different designs of target structure allows the simple andefficient inspection apparatus based on a segmented detection system tooperate with a wider range of target designs, including those havingsignificant diffraction in a second direction in both layers.

Additionally, the disclosed method and apparatus can deliver informationabout the two-dimensional character of the target structures. Suchinformation may in practice be unknown, prior to inspection.

With regard to the third embodiment, a single acquisition from acomposite metrology target can determine 2D overlay. This thirdembodiment can be extendibility to multi-layer target design.

The embodiments based on continuous array structures can reduce noiseand process dependency, as well as enabling intra-target/inter-gratingcorrection of process effects.

The arrangement of target structures with progressive bias differenceshelps reduce edge-effects between gratings, enabling larger ROIselection and/or reduced overall target size.

Additional measurements of parameters such as bottom grating asymmetrycan be integrated into the target design.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described.

While the inspection apparatus or tool illustrated in the embodimentscomprises a particular form of scatterometer having first and secondbranches for simultaneous imaging of pupil plane and substrate plane byparallel image sensors, alternative arrangements are possible. Ratherthan provide two branches permanently coupled to objective lens 16 withbeam splitter 17, the branches could be coupled selectively by a movableoptical element such as a mirror. The optical system could be madehaving a single image sensor, the optical path to the sensor beingreconfigured by movable elements to serve as a pupil plane image sensorand then a substrate plane image sensor.

While the optical system illustrated in FIG. 2 comprises refractiveelements, reflective optics can be used instead. For example the use ofreflective optics may enable the use of shorter wavelengths ofradiation.

While the target structures described above are metrology targetsspecifically designed and formed for the purposes of measurement, inother embodiments, properties may be measured on targets which arefunctional parts of devices formed on the substrate. Many devices haveregular, grating-like structures. The terms ‘target grating’ and ‘targetstructure’ as used herein do not require that the structure has beenprovided specifically for the measurement being performed.

In association with the inspection apparatus hardware and suitabletarget structures realized on patterning devices and on patternedsubstrates, an embodiment may include a computer program containing oneor more sequences of machine-readable instructions implementing methodsof measurement of the type illustrated above to obtain information abouta target structure and/or about a lithographic process. This computerprogram may be executed, for example, within image processor andcontroller PU in the apparatus of FIG. 2 and/or the control unit LACU ofFIG. 1. There may also be provided a data storage medium (e.g.,semiconductor memory, magnetic or optical disk) having such a computerprogram stored therein.

Further embodiments according to the invention are described in belownumbered clauses:

1. A method of determining overlay performance of a lithographicprocess, the method including the following steps:

(a) obtaining a plurality of target structures that have been formed bythe lithographic process, each target structure comprising a set offirst features arranged periodically in at least a first direction and aset of second features arranged periodically in at least the firstdirection and being subject to overlay error in the placement of thesecond features relative to the first features,

(b) using a detection system to capture first diffraction signalscomprising selected portions of radiation diffracted by at least asubset of the target structures;

(c) using the detection system to capture second diffraction signalscomprising selected portions of radiation diffracted by at least asubset of the overlay targets;

(d) processing asymmetry information derived from the first diffractionsignals and the second diffraction signals to calculate at least ameasurement of said overlay error in at least the first direction,

wherein said target structures have been formed with programmed offsetsin the placement of the second features relative to the first featuresin addition to said overlay error, the programmed offsets within eachsubset differing in both the first direction and in a second direction,the first and second directions being non-parallel,

and wherein the calculation of overlay error in step (d) combines saidasymmetry information with knowledge of said programmed offsets whilemaking no assumption whether asymmetry in a given target structureresults from relative displacement of the second features in the firstdirection, in the second direction or both directions.

2. A method according to clause 1 wherein the first diffraction signalsare captured in step (b) under first capture conditions and the seconddiffraction signals are captured in step (c) under second captureconditions different from the first capture conditions.

3. A method according to clause 2 wherein said first capture conditionsand said second capture conditions differ in one or more of thewavelength, polarization, and angular distribution of radiation used forillumination and/or detection of the target structures.

4. A method according to clause 1, 2 or 3 wherein the first diffractionsignals captured in step (b) comprise radiation diffracted by a firstsubset of target structures and the second diffraction signals capturedin step (c) comprise radiation diffracted by a second subset of targetstructures different from the first subset of target structures.

5. A method according to clause 4 wherein the target structures of saidfirst subset and the target structures of said second subset differ inone or more of pitch, feature size, relative placement, and segmentationin the second direction.

6. A method according to clause 4 wherein the target structures of saidfirst subset and the target structures of said second subset differ onlyin the combinations of programmed offsets in both the first directionand the second direction, the number of combinations of programmedoffsets available over both subsets being greater than four.

7. A method according to clause 6 wherein target structures of the firstand second subsets are arranged together a composite metrology target,the layout of target structures being such that a bias vector defined bythe programmed offsets in the first and second directions variesprogressively from each target structure to its neighbors.

8. A method according to any of clauses 1 to 7 wherein each of saidfirst features and said second features comprises a feature whosedimension is the same in the first direction as in the second direction.

9. A method according to any preceding clause wherein each of said firstfeatures and said second features comprises an elongate featureextending transverse to the first direction and being segmentedperiodically in the second direction.

10. A method according to clause 9 wherein the segmentation of theelongate first and second features has a period different to a period ofspacing of the first and second features.

11. A method according to any preceding clause wherein the firstfeatures of at least the first subset of target structures are formed ina first continuous array and the second features of the first subset oftarget structures are formed in a second continuous array of features,the different target structures being defined by variation of saidpositional offsets over one or other of said continuous arrays.

12. A method according to any preceding clause wherein the calculationof overlay error in step (d) derives from the first diffraction signalsa first asymmetry value for each of at least four target structures andderives from the second diffraction signals a second asymmetry value foreach of at least four target structures, and uses at least the derivedfirst and second asymmetry values to solve equations in more than fourunknowns, one of said unknowns being the measurement of overlay error inthe first direction.

13. A method according to any preceding clause wherein the calculationof overlay error in step (d) derives from the first and seconddiffraction signals an asymmetry value for five or more targetstructures, and uses at least the derived asymmetry values to solveequations in more than four unknowns, one of said unknowns being themeasurement of overlay error in the first direction.

14. A method according to clause 13 wherein the calculation of overlayerror in step (d) derives from the first and second diffraction signalsan asymmetry value for seven or more target structures, and uses atleast the derived first and second asymmetry values to solve equationsin more than four unknowns, one of said unknowns being the measurementof overlay error in the first direction.

15. A method according to any preceding clause further comprising astep:

(c2) using the detection system to capture third diffraction signalscomprising selected portions of radiation diffracted by at least asubset of the overlay targets,

and wherein the step (d) includes processing asymmetry informationderived from the first diffraction signals, the second diffractionsignals and the third diffraction signals to calculate a measurement ofsaid overlay error in at least the first direction.

16. A method according to clause 15 wherein the calculation of overlayerror in step (d) uses the first diffraction signals to derive anasymmetry value for each of at least four target structures, uses thesecond diffraction signals to derive an asymmetry value for each of atleast four target structures and uses the third diffraction signals toderive an asymmetry value for each of at least three target structures,and uses more than eight of the derived asymmetry values to solveequations in more than eight unknowns, one of said unknowns being themeasurement of overlay error in the first direction.

17. A method according to any of clauses 12 to 16 to wherein thecalculation of overlay error in step (d) calculates a measurement ofoverlay error in the second direction.

18. A method according to any preceding clause wherein in step (b) saidfirst diffraction signals for said plurality of target structures arecaptured using a detection system to form one or more first images ofthe plurality of target structures, in step (c) said second diffractionsignals for the plurality of target structures are captured using thedetection system to form one or more second images of the plurality oftarget structures, and in step (d) a first asymmetry value for eachtarget structure is derived from intensity values in respective portionsof said first image or images and a second asymmetry value is derivedfrom intensity values in respective portions of said second image orimages.

19. A method according to clause 18 wherein each of said first andsecond images contains complementary portions which are images of thesame plurality of target structures formed using opposite diffractionorders of radiation diffracted in the first and second directions.

20. A method according to any preceding clause wherein in steps (b) and(c) said diffraction signals are captured while illuminating the targetstructures using a segmented illumination profile having illuminatedregions and dark regions, each illuminated region being symmetricallyopposite a dark region, when reflected in the first direction and whenreflected in the second direction.

21. A method according to clause 20 wherein said segmented illuminationprofile has four quadrants, said illuminated regions falling only withintwo quadrants diametrically opposite one another.

22. A method according to clause 20 or 21 wherein said detection systemis a segmented detection system, whereby the or each first image and theor each second image, includes complementary portions which are imagesof the target structure structures formed using opposite diffractionorders of the radiation diffracted by the target structure.

23. A method according to any preceding clause wherein each of saidtarget structures is formed in two or more layers, said first featuresand second features being formed in different ones of said layers.

24. A method according to any preceding clause wherein said plurality oftarget structures comprises four target structures arranged together ina rectangular layout divided into similar quarters.

25. A method according to any preceding clause further comprising usingthe determined property to modify a metrology recipe for measuringfurther target structures.

26. A method according to any preceding clause further comprising usingthe determined property to control a lithographic apparatus to applypatterns to substrates.

27. An inspection apparatus for determining overlay performance of alithographic process, the inspection apparatus comprising:

a support for a substrate on which are provided a plurality of targetstructures that have been formed by the lithographic process, eachtarget structure comprising a set of first features arrangedperiodically in at least a first direction and a set of second featuresarranged periodically in at least the first direction and being subjectto overlay error in the placement of the second features relative to thefirst features,

an illumination system and a detection system which are togetheroperable to capture first diffraction signals comprising selectedportions of radiation diffracted by at least a subset of the targetstructures and second diffraction signals comprising selected portionsof radiation diffracted by at least a subset of the overlay targets;

a processor for processing asymmetry information derived from the firstdiffraction signals and the second diffraction signals to calculate atleast a measurement of said overlay error in at least the firstdirection,

wherein said processor is operable on the basis that said targetstructures have been formed with programmed offsets in the placement ofthe second features relative to the first features in addition to saidoverlay error, the programmed offsets within each subset differing inboth the first direction and in a second direction, the first and seconddirections being non-parallel,

and said processor is arranged to calculate overlay error by combiningsaid asymmetry information with knowledge of said programmed offsetswhile making no assumption whether asymmetry in a given target structureresults from relative displacement of the second features in the firstdirection, in the second direction or both directions.

28. An inspection apparatus according to clause 27 wherein theillumination system and the detection system are configured such thatsaid first diffraction signals are captured under first captureconditions and the second diffraction signals are captured under secondcapture conditions different from the first capture conditions.

29. An inspection apparatus according to clause 28 wherein said firstcapture conditions and said second capture conditions differ in one ormore of the wavelength, polarization, and angular distribution ofradiation used for illumination and/or detection of the targetstructures.

30. An inspection apparatus according to clause 27, 28 or 29 wherein thefirst diffraction signals comprise radiation diffracted by a firstsubset of target structures and the second diffraction signals compriseradiation diffracted by a second subset of target structures differentfrom the first subset of target structures.

31. An inspection apparatus according to any of clauses 27 to 30 whereinthe processor is arranged to calculate overlay error by deriving fromthe first diffraction signals a first asymmetry value for each of atleast four target structures, by deriving from the second diffractionsignals a second asymmetry value for each of at least four targetstructures, and by using at least the derived first and second asymmetryvalues to solve equations in more than four unknowns, one of saidunknowns being the measurement of overlay error in the first direction.

32. An inspection apparatus according to any of clauses 27 to 30 whereinthe processor is arranged to calculate overlay error by deriving fromthe first and second diffraction signals an asymmetry value for five ormore target structures, and to use at least the derived asymmetry valuesto solve equations in more than four unknowns, one of said unknownsbeing the measurement of overlay error in the first direction.

33. An inspection apparatus according to clause 32 wherein the processoris arranged to calculate overlay error by deriving from the first andsecond diffraction signals an asymmetry value for seven or more targetstructures, and to use at least the derived first and second asymmetryvalues to solve equations in more than four unknowns, one of saidunknowns being the measurement of overlay error in the first direction.

34. An inspection apparatus according to any of clauses 27 to 33 whereinthe illumination system and the detection system are further operabletogether to capture third diffraction signals comprising selectedportions of radiation diffracted by at least a subset of the overlaytargets, and wherein the processor is arranged to process asymmetryinformation derived from the first diffraction signals, the seconddiffraction signals and the third diffraction signals to calculate ameasurement of said overlay error in at least the first direction.

35. An inspection apparatus according to clause 34 wherein the processoris arranged to calculate overlay error by using the first diffractionsignals to derive an asymmetry value for each of at least four targetstructures, by using the second diffraction signals to derive anasymmetry value for each of at least four target structures and by usingthe third diffraction signals to derive an asymmetry value for each ofat least three target structures, and by using more than eight of thederived asymmetry values to solve equations in more than eight unknowns,one of said unknowns being the measurement of overlay error in the firstdirection.

36. An inspection apparatus according to any of clauses 31 to 35 whereinthe processor is arranged also to calculate a measurement of overlayerror in the second direction.

37. An inspection apparatus according to any of clauses 27 to 35 whereinthe illumination system and detection system are operable to capturesaid first diffraction signals for said plurality of target structuresin the form of one or more first images of the plurality of targetstructures and also operable to capture said second diffraction signalsfor the plurality of target structures in the form of one or more secondimages of the plurality of target structures, and wherein the processoris arranged to derive a first asymmetry value for each target structurefrom intensity values in respective portions of said first image orimages and to derive a second asymmetry value from intensity values inrespective portions of said second image or images.

38. An inspection apparatus according to clause 37 wherein each of saidfirst and second images contains complementary portions which are imagesof the same plurality of target structures formed using oppositediffraction orders of radiation diffracted in the first and seconddirections.

39. An inspection apparatus according to any of clauses 27 to 38 whereinsaid illumination system is operable to illuminate the target structuresusing a segmented illumination profile having illuminated regions anddark regions, each illuminated region being symmetrically opposite adark region, when reflected in the first direction and when reflected inthe second direction.

40. An inspection apparatus according to clause 39 wherein saidsegmented illumination profile has four quadrants, said illuminatedregions falling only within two quadrants diametrically opposite oneanother.

41. An inspection apparatus according to clause 39 or 40 wherein saiddetection system is a segmented detection system, whereby the or eachfirst image and the or each second image, includes complementaryportions which are images of the target structure structures formedusing opposite diffraction orders of radiation diffracted by the targetstructure.

42. A metrology target for use in a method according to any of clauses 1to 26 wherein said metrology target includes at least four targetstructures, each target structure comprising first features periodic inboth a first direction and a second direction and second featuresperiodic in both the first direction and the second direction, the firstand second directions being non-parallel, and wherein said targetstructures have programmed offsets in placement of the second featuresrelative to the first features in both the first direction and thesecond direction, each target structure within said at least four targetstructures having a different combination of programmed offset in thefirst and second directions.

43. A metrology target according to clause 42 wherein each of saidtarget structures is formed in two or more layers, said first featuresand second features being formed in different ones of said layers.

44. A metrology target according to clause 42 or 43 wherein said atleast four target structures are arranged together in a rectangularlayout divided into similar quarters.

45. A metrology target according to clause 42, 43 or 44 wherein themetrology target includes a first subset of said target structures and asecond subset of said target structures, each subset comprising at leastfour target structures having a different combination of programmedoffset in the first and second directions, the second subset of targetstructures being different from the first subset of target structures.

46. A metrology target according to clause 45 wherein the targetstructures of said first subset and the target structures of said secondsubset differ in one or more of pitch, feature size, relative placement,and segmentation in the second direction.

47. A metrology target according to clause 45 wherein the targetstructures of said first subset and the target structures of said secondsubset differ only in the combinations of programmed offsets in both thefirst direction and the second direction, the number of combinations ofprogrammed offsets available over both subsets being greater than four.

48. A metrology target according to clause 47 wherein target structuresof the first and second subsets are arranged together a compositemetrology target, the layout of target structures being such that a biasvector defined by the programmed offsets in the first and seconddirections varies progressively from each target structure to itsneighbors.

49. A metrology target according to any of clauses 42 to 48 wherein eachof said first features and said second features comprises a featurewhose dimension is the same in the first direction as in the seconddirection.

50. A metrology target according to any of clauses 42 to 49 wherein thefirst features of at least the first subset of target structures areformed in a first continuous array and the second features of the firstsubset of target structures are formed in a second continuous array offeatures, the different target structures being defined by variation ofsaid positional offsets over one or other of said continuous arrays.

51. A processing device arranged to receive at least first and seconddiffraction signals captured from a plurality of target structures andto derive a measurement of overlay error in at least a first directionby performing the step (d) in the method of any of clauses 1 to 26.

52. A processing device according to clause 51 arranged to receive saidfirst diffraction signals in the form of one or more first images ofsaid plurality of target structures and to receive said seconddiffraction signals in the form of one or more second images of saidplurality of target structures.

53. A computer program product comprising machine readable instructionsfor causing a programmable processing device to receive at least firstand second diffraction signals captured from a plurality of targetstructures and to derive a measurement of overlay error in at least afirst direction by performing the step (d) in the method of any ofclauses 1 to 26.

54. A computer program product according to clause 42 wherein saidmachine readable instructions are further arranged to cause theprogrammable processing device to control automatically the operation ofan inspection apparatus to cause capture of the first and seconddiffraction signals by steps (b) and (c) of the method.

55. A lithographic system comprising:

a lithographic apparatus for applying a pattern onto one or moresubstrates;

an inspection apparatus according to any of clauses 27 to 41; and

a control system for controlling the lithographic apparatus using themeasurement results from the inspection apparatus, when applying thepattern to further substrates.

56. A method of manufacturing devices wherein a device pattern isapplied to a series of substrates using a lithographic process, themethod including overlay error using a plurality of target structuresformed as part of or beside said device pattern on at least one of saidsubstrates using a method according to any of clauses 1 to 26, andcontrolling the lithographic process for later substrates in accordancewith the result of the measuring.

57. A metrology target for use in overlay metrology, said metrologytarget including a plurality of target structures, each target structurecomprising first features periodic in both a first direction and asecond direction and second features periodic in both the firstdirection and the second direction, the first and second directionsbeing non-parallel, and wherein different ones of said target structureshave different programmed offsets in placement of the second featuresrelative to the first features in both the first direction and thesecond direction, and wherein said target structures are arranged intosaid metrology target such that any target structure bordering twoneighboring target structures has a programmed offset intermediatebetween the programmed offsets of those two neighboring targetstructures.

58. A metrology target according to clause 57 wherein a bias vectorrepresenting said programmed offset rotates less than ninety degreesbetween neighboring target structures.

59. A metrology target according to clause 58 wherein a bias vectorrepresenting said programmed offset rotates 45 degrees betweenneighboring target structures.

60. A metrology target according to any of clauses 57 to 59 wherein fiveor more of said target structures are arranged in a closed ring.

61. A metrology target according to any of clauses 57 to 60 whereineight or more of said target structures are arranged in said closedring.

62. A metrology target according to any of clauses 57 to 61 wherein fiveor more of said target structures are arranged in a line.

63. A metrology target according to any of clauses 57 to 62 whereinseven or more of said target structures are arranged in a line.

64 A set of patterning devices for use in a lithographic process, thepatterning devices including at least a first patterning deviceconfigured to define the first features of a metrology target accordingto any of clauses 57 to 63 and a second patterning device configured forto define the second features of the metrology target.

65. A set of patterning devices according to clause 64 wherein the firstfeatures of said target structures are formed in a first continuousarray and the second features of the first subset of target structuresare formed in a second continuous array of features, the differenttarget structures being defined by variation of said positional offsetsover one or other of said continuous arrays.

Although specific reference may have been made above to the use ofembodiments of the invention in the context of optical lithography, itwill be appreciated that the invention may be used in otherapplications, for example imprint lithography, and where the contextallows, is not limited to optical lithography. In imprint lithography atopography in a patterning device defines the pattern created on asubstrate. The topography of the patterning device may be pressed into alayer of resist supplied to the substrate whereupon the resist is curedby applying electromagnetic radiation, heat, pressure or a combinationthereof. The patterning device is moved out of the resist leaving apattern in it after the resist is cured.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.,having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm) andextreme ultra-violet (EUV) radiation (e.g., having a wavelength in therange of 1-100 nm), as well as particle beams, such as ion beams orelectron beams. Implementations of scatterometers and other inspectionapparatus can be made in UV and EUV wavelengths using suitable sources,and the present disclosure is in no way limited to systems using IR andvisible radiation.

The term “lens”, where the context allows, may refer to any one orcombination of various types of optical components, includingrefractive, reflective, magnetic, electromagnetic and electrostaticoptical components. Reflective components are likely to be used in anapparatus operating in the UV and/or EUV ranges.

The breadth and scope of the present invention should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

1. A metrology target for use in overlay metrology, the metrology targetcomprising: a plurality of target structures, each target structurehaving first features periodic in both a first direction and a seconddirection and second features periodic in both the first direction andthe second direction, wherein the first and second directions arenon-parallel, wherein different ones of the target structures havedifferent programmed offsets in placement of the second featuresrelative to the first features in both the first direction and thesecond direction, and wherein the target structures are arranged intothe metrology target such that any target structure bordering twoneighboring target structures has a programmed offset intermediatebetween the programmed offsets of those two neighboring targetstructures.
 2. The metrology target of claim 1, wherein a bias vectorrepresenting the programmed offset rotates less than ninety degreesbetween neighboring target structures.
 3. The metrology target of claim2, wherein a bias vector representing the programmed offset rotates 45degrees between neighboring target structures.
 4. The metrology targetof claim 1, wherein five or more of the target structures are arrangedin a closed ring. The metrology target of claim 1, wherein eight or moreof the target structures are arranged in the closed ring.
 6. Themetrology target of claim 1, wherein five or more of the targetstructures are arranged in a line.
 7. The metrology target of claim 1,wherein seven or more of the target structures are arranged in a line.8. A set of patterning devices for use in a lithographic process, thepatterning devices including at least a first patterning deviceconfigured to define the first features of a metrology target of claim1, and a second patterning device configured to define the secondfeatures of the metrology target.
 9. The set of patterning devices ofclaim 8, wherein the first features of the target structures are formedin a first continuous array and the second features of the first subsetof target structures are formed in a second continuous array offeatures, the different target structures being defined by variation ofthe positional offsets over one or other of the continuous arrays. 10.The metrology target of claim 2, wherein five or more of the targetstructures are arranged in a closed ring.
 11. The metrology target ofclaim 3, wherein five or more of the target structures are arranged in aclosed ring.
 12. The metrology target of claim 2, wherein eight or moreof the target structures are arranged in the closed ring.
 13. Themetrology target of claim 3, wherein eight or more of the targetstructures are arranged in the closed ring.
 14. The metrology target ofclaim 4, wherein eight or more of the target structures are arranged inthe closed ring.
 15. The metrology target of claim 2, wherein five ormore of the target structures are arranged in a line.
 16. The metrologytarget of claim 3, wherein five or more of the target structures arearranged in a line.
 17. The metrology target of claim 4, wherein five ormore of the target structures are arranged in a line.
 18. The metrologytarget of claim 5, wherein five or more of the target structures arearranged in a line.
 19. The metrology target of claim 6, wherein sevenor more of the target structures are arranged in a line.
 20. A set ofpatterning devices for use in a lithographic process, the patterningdevices including at least a first patterning device configured todefine the first features of a metrology target of claim 8, and a secondpatterning device configured for to define the second features of themetrology target.